公开(公告)号：US20240159936A1

公开(公告)日：2024-05-16

申请号：US18054393

申请日：2022-11-10

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Ian B. Murray ,  Jeremy B. Reeves

IPC: G02B1/00 ,  G08C23/04

CPC classification number: G02B1/002 ,  G08C23/04

Abstract: An active infrared system may include at least one metamaterial optical element. The active infrared system may also include at least one lens assembly optically aligned with the at least one metamaterial optical element. The active infrared system may also include at least one active camera optically aligned with the at least one metamaterial optical element. The at least one metamaterial optical element of the active infrared system may also be configured with at least a reflection mode for reflecting at least one light waveband reflected by a remote object and a transmission mode for transmitting a uniform background light that is wider than the at least one light waveband reflected by the remote object.

公开(公告)号：US11614365B1

公开(公告)日：2023-03-28

申请号：US17229310

申请日：2021-04-13

Applicant: BAE Systems Information and Electronic Systems Integration, Inc.

Inventor： Jeremy B. Reeves ,  Steven R. Jost ,  Paul R. Moffitt ,  Ian B. Murray ,  David J. Shelton ,  Raymond D. Tower, Jr.

IPC: G01J5/061 ,  H04N5/33 ,  H04N25/671 ,  G01J5/53 ,  G01J5/80 ,  G01J5/06 ,  G01J5/00 ,  G01J5/52

Abstract: A luminescent diode surface within the cold shield of an infrared camera to allow for continuous non-uniformity correction with uniform irradiance across an infrared IR detector array. Further provided by the inclusion of a luminescent diode surface within the cold shield paneling is the ability to change the diode bias providing a negative luminescent effect while utilizing reverse bias and an electro-luminescent effect while utilizing a forward bias. This may then further allow for multiple set points to provide continuous offset and gain correction and to correct non-linear response effects.

公开(公告)号：US12203192B2

公开(公告)日：2025-01-21

申请号：US18072931

申请日：2022-12-01

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Jeremy B. Reeves ,  Kevin T. Zawilski ,  Peter G. Schunemann

IPC: C30B25/20 ,  C09D5/00 ,  C30B25/16 ,  C30B29/42 ,  H05K9/00

Abstract: A method of manufacturing a structurally competent, EMI-shielded IR window includes using a mathematical model that combines the Sotoodeh and Nag models to determine an optimal thickness and dopant concentration of a doped layer of GaAs or GaP. A slab of GaAs or GaP is prepared, and a doped layer of the same material having the optimal thickness and dopant concentration is applied thereto. In embodiments, the doped layer is applied by an HVPE method such as LP-HVPE, which can also provide enhanced GaAs transparency near 1 micron. The Drude model can be applied to assist in selecting an anti-reflective coating. If the model predicts that the requirements of an application cannot be met by a doped layer alone, a doped layer can be applied that exceeds the required IR transparency, and a metallic grid can be applied to improve the EMI shielding, thereby satisfying the requirements.

公开(公告)号：US20240183066A1

公开(公告)日：2024-06-06

申请号：US18072931

申请日：2022-12-01

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Jeremy B. Reeves ,  Kevin T. Zawilski ,  Peter G. Schunemann

IPC: C30B25/20 ,  C09D5/00 ,  C30B25/16 ,  C30B29/42 ,  H05K9/00

CPC classification number: C30B25/20 ,  C09D5/006 ,  C30B25/16 ,  C30B29/42 ,  H05K9/0005 ,  H05K9/0094

Abstract: A method of manufacturing a structurally competent, EMI-shielded IR window includes using a mathematical model that combines the Sotoodeh and Nag models to determine an optimal thickness and dopant concentration of a doped layer of GaAs or GaP. A slab of GaAs or GaP is prepared, and a doped layer of the same material having the optimal thickness and dopant concentration is applied thereto. In embodiments, the doped layer is applied by an HVPE method such as LP-HVPE, which can also provide enhanced GaAs transparency near 1 micron. The Drude model can be applied to assist in selecting an anti-reflective coating. If the model predicts that the requirements of an application cannot be met by a doped layer alone, a doped layer can be applied that exceeds the required IR transparency, and a metallic grid can be applied to improve the EMI shielding, thereby satisfying the requirements.