公开(公告)号：US20160181096A1

公开(公告)日：2016-06-23

申请号：US15057403

申请日：2016-03-01

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Daniel N. Carothers ,  Craig M. Hill ,  Andrew TS Pomerene ,  Vu An Vu

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658

Abstract: A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed laser to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.

Abstract translation: 公开了一种用于生长锗外延膜的方法。 首先，用氢气预处理硅衬底。 然后，预处理的硅衬底的温度降低，并且锗烷气体在预处理的硅衬底上流动以形成固有的锗种子层。 接下来，可以将锗烷烃和磷化氢气体的混合物流过本征锗种子层，以产生n掺杂的锗种子层。 否则，乙硼烷和锗烷气体的混合物可以流过本征锗种子激光器以产生p掺杂的锗种子层。 此时，可以在掺杂的锗种子层的顶部上生长大块锗层。