-
公开(公告)号:US20210079025A1
公开(公告)日:2021-03-18
申请号:US16954371
申请日:2018-11-09
Applicant: BASF SE , Wayne State University
Inventor: Lukas Mayr , David Dominique Schweinfurth , Daniel Waldmann , Charles Hartger Winter , Kyle Blakeney , Sinja Verena Klenk , Sabine Weiguny , Nilanka Weerathunga Sirikkathuge , Tharindu Malawara Arachchige Nimanthaka Karunaratne
IPC: C07F5/06 , C23C16/455 , C23C16/08 , C23C16/20
Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.
-
公开(公告)号:US20210024549A1
公开(公告)日:2021-01-28
申请号:US17046208
申请日:2019-04-10
Applicant: BASF SE , Wayne State University
Inventor: Charles Hartger Winter , Kyle Blakeney , Lukas Mayr , David Dominique Schweinfurth , Sabine Weiguny , Daniel Waldmann
IPC: C07F5/06 , C23C16/30 , C23C16/455
Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
-
公开(公告)号:US20200292902A1
公开(公告)日:2020-09-17
申请号:US16082013
申请日:2017-03-07
Applicant: BASF SE
Inventor: Daniel Waldmann , Jens Roeder , Michael Goebel , Maraike Ahlf
IPC: G02F1/155 , G02F1/153 , G02F1/1516 , G02F1/163
Abstract: Described herein is a process for switching an electrochromic cell including at least a first electrode layer and a second electrode layer. The cell also includes an ion-conducting layer that separates the first and second electrode layers and a temperature sensor for measuring a temperature in or on or in the vicinity of the electrochromic cell. Moreover, a first contact member is electronically connected with the first electrode layer, and a second contact member is electronically connected with the second electrode layer. Furthermore, at least the first electrode layer includes an organic polymer matrix and, dispersed therein, an electrochromic material, electronically conductive nanoobjects, and an electrolyte dissolved in a solvent. Further, the process including measuring the current flowing through the cell if a voltage is applied to the electrode layers, applying a voltage to the contact members, and varying the applied voltage as a function of the current.
-
公开(公告)号:US11377454B2
公开(公告)日:2022-07-05
申请号:US17046208
申请日:2019-04-10
Applicant: BASF SE , Wayne State University
Inventor: Charles Hartger Winter , Kyle Blakeney , Lukas Mayr , David Dominique Schweinfurth , Sabine Weiguny , Daniel Waldmann
IPC: C07F5/06 , C23C16/30 , C23C16/455
Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
-
公开(公告)号:US10347848B2
公开(公告)日:2019-07-09
申请号:US14916523
申请日:2014-09-02
Applicant: BASF SE
Inventor: Wilfried Hermes , Ingmar Bruder , Peter Erk , Daniel Waldmann
IPC: C07C211/65 , H01L51/00 , H01L51/42 , C07C209/60 , C07C211/04 , H01L27/28 , H01L33/50 , B82Y30/00 , H01L51/05 , H01L51/50 , H01L27/30
Abstract: The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R1NR23)5Me X1aX2b wherein R1 is C1-C4-alkyl, R2 are independently of one another hydrogen or C1-C4-alkyl, Me is a divalent metal, X1 and X2 have different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.
-
公开(公告)号:US20190181498A1
公开(公告)日:2019-06-13
申请号:US16309500
申请日:2017-06-07
Applicant: BASF SE
Inventor: Michael Baecker , Daniel Waldmann , Joern Kulisch , Johan ter Maat , Pascal Hartmann , Mariusz Mosiadz , Annika Baumann , Lukas Ewald
IPC: H01M10/0562 , H01M10/0525
Abstract: Described herein is a process for preparing a thin film including a solid electrolyte, which includes lithium and sulfur.
-
公开(公告)号:US11505562B2
公开(公告)日:2022-11-22
申请号:US16954371
申请日:2018-11-09
Applicant: BASF SE , Wayne State University
Inventor: Lukas Mayr , David Dominique Schweinfurth , Daniel Waldmann , Charles Hartger Winter , Kyle Blakeney , Sinja Verena Klenk , Sabine Weiguny , Nilanka Weerathunga Sirikkathuge , Tharindu Malawara Arachchige Nimanthaka Karunaratne
IPC: C23C16/20 , C07F5/06 , C23C16/08 , C23C16/455 , C23C16/12
Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.
-
-
-
-
-
-