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公开(公告)号：US10403822B2
公开(公告)日：2019-09-03
申请号：US15324548
申请日：2015-07-07
Applicant: BASF SE
Inventor： Iain McCulloch , Iain Meager , Bob Schroeder , Pascal Hayoz , Jean-Charles Flores , Klemens Mathauer , Patrice Bujard , Daniel Kaelblein
Abstract: Polymers containing at least one unit of formula wherein X1, X2 and X3 are independently from each other O, S or NR1, a process for their preparation, intermediates and electronic devices containing these polymers as semiconducting material.
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2.发明申请公开(公告)号：US20150056746A1
公开(公告)日：2015-02-26
申请号：US14529078
申请日：2014-10-30
Applicant: BASF SE
Inventor： Mathias Düggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Frédéric Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G.R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
IPC: H01L51/00
CPC classification number: H01L51/0036 , C08G61/12 , C08G61/124 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/18 , C08G2261/228 , C08G2261/3223 , C08G2261/3229 , C08G2261/3241 , C08G2261/3243 , C08G2261/3246 , C08G2261/334 , C08G2261/364 , C08G2261/411 , C08G2261/92 , H01L27/283 , H01L51/0001 , H01L51/0007 , H01L51/0043 , H01L51/0053 , H01L51/0558
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
Abstract translation: 本发明涉及包含式I或III的重复单元的聚合物及其在有机器件，特别是有机场效应晶体管（OFET）中的有机半导体的用途，或包含二极管和/或有机场效应的器件 晶体管。 根据本发明的聚合物在有机溶剂中具有优异的溶解性和优异的成膜性能。 此外，当根据本发明的聚合物用于有机场效应晶体管时，可以观察到能量转换的高效率，优异的场效应迁移率，良好的开/关电流比和/或优异的稳定性。
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公开(公告)号：US10431745B2
公开(公告)日：2019-10-01
申请号：US16043966
申请日：2018-07-24
Applicant: BASF SE
Inventor： Mathias Duggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G. R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
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公开(公告)号：US09893288B2
公开(公告)日：2018-02-13
申请号：US15364978
申请日：2016-11-30
Applicant: BASF SE
Inventor： Mathias Duggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G. R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
CPC classification number: H01L51/0036 , C08G61/12 , C08G61/124 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/18 , C08G2261/228 , C08G2261/3223 , C08G2261/3229 , C08G2261/3241 , C08G2261/3243 , C08G2261/3246 , C08G2261/334 , C08G2261/364 , C08G2261/411 , C08G2261/92 , H01L27/283 , H01L51/0001 , H01L51/0007 , H01L51/0043 , H01L51/0053 , H01L51/0558
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
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公开(公告)号：US10815236B2
公开(公告)日：2020-10-27
申请号：US16080166
申请日：2017-02-27
Applicant: BASF SE
Inventor： Jean-Charles Flores , Pascal Hayoz , Iain McCulloch , Nkechinyerem Onwubiko , Daniel Kaelblein , Wan Yue , Hung-Yang Chen , Astrid-Caroline Knall
IPC: C07D487/04 , C09B57/00 , C09B69/10 , H01L51/00 , H01L51/05
Abstract: Compounds of formula (I) and polymers comprising at least a structure of formula (II), wherein T1 or T2 are independently of each other a group of Formula (III), Formula (iv) Qa, Qb, Qc, Qd, Qe or Qf are independently of each other O, S or NR1.
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Patent Agency Ranking
公开(公告)号：US20170148992A1
公开(公告)日：2017-05-25
申请号：US15364978
申请日：2016-11-30
Applicant: BASF SE
Inventor： Mathias Duggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Frederic Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G.R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
CPC classification number: H01L51/0036 , C08G61/12 , C08G61/124 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/18 , C08G2261/228 , C08G2261/3223 , C08G2261/3229 , C08G2261/3241 , C08G2261/3243 , C08G2261/3246 , C08G2261/334 , C08G2261/364 , C08G2261/411 , C08G2261/92 , H01L27/283 , H01L51/0001 , H01L51/0007 , H01L51/0043 , H01L51/0053 , H01L51/0558
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
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公开(公告)号：US20170148991A1
公开(公告)日：2017-05-25
申请号：US15364893
申请日：2016-11-30
Applicant: BASF SE
Inventor： Mathias Duggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Frederic Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G.R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
CPC classification number: H01L51/0036 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/3223 , C08G2261/3229 , C08G2261/3243 , C08G2261/334 , C08G2261/344 , C08G2261/364 , C08G2261/411 , C08G2261/92 , H01L27/283 , H01L51/0003 , H01L51/0035 , H01L51/0043 , H01L51/0558
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
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公开(公告)号：US10224484B2
公开(公告)日：2019-03-05
申请号：US15364893
申请日：2016-11-30
Applicant: BASF SE
Inventor： Mathias Duggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Frederic Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G. R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
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9.发明授权公开(公告)号：US09929364B2
公开(公告)日：2018-03-27
申请号：US14888574
申请日：2014-04-29
Applicant: BASF SE
Inventor： Hans Jürg Kirner , Emmanuel Martin , Patrice Bujard , Jean-Charles Flores , Jordan Thomas Kopping
IPC: H01L51/05 , H01L49/02 , C08F232/04 , H01L51/00
CPC classification number: H01L51/052 , C08F232/04 , H01L28/40 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/0541
Abstract: The present invention relates to an electronic device comprising a dielectric material, which dielectric material comprises a copolymer comprising styrene and maleimic acid and derivatives thereof as structural units, a process for the preparation of the electronic device and to the use of the copolymer as dielectric material, especially as dielectric layer in printed electronic devices such as capacitors and organic field-effect transistors.
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公开(公告)号：US20190027690A9
公开(公告)日：2019-01-24
申请号：US15364893
申请日：2016-11-30
Applicant: BASF SE
Inventor： Mathias Duggeli , Mahmoud Zaher Eteish , Pascal Hayoz , Olivier Frederic Aebischer , Marta Fonrodona Turon , Margherita Fontana , Marian Lanz , Mathieu G.R. Turbiez , Beat Schmidhalter , Jean-Charles Flores
Abstract: The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors.
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