公开(公告)号：US12146125B2

公开(公告)日：2024-11-19

申请号：US17057801

申请日：2019-05-13

Applicant: BASF SE

Inventor： Marcel Brill ,  Daniel Loeffler ,  Yeni Burk ,  Frank Pirrung ,  Lothar Engelbrecht ,  Szilard Csihony ,  Maike Bergeler ,  Volodymyr Boyko ,  Patrick Wilke

IPC: C11D7/26 ,  C11D3/20 ,  C11D7/50 ,  G03F7/20 ,  G03F7/40 ,  G03F7/42

Abstract: The invention relates to the use of a composition comprising a C1 to C6 alkanol and a carboxylic acid ester of formula (I) wherein R1 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; R2 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; X21, X22 are independently selected from C1 to C6 alkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the C1 to C6 alkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.

公开(公告)号：US11970647B2

公开(公告)日：2024-04-30

申请号：US17624872

申请日：2020-06-19

Applicant: BASF SE

Inventor： Francisco Javier Lopez Villanueva ,  Yeni Burk ,  Daniel Loeffler ,  Jan Ole Mueller ,  Marcel Brill ,  Patrick Wilke ,  Jean-Pierre Berkan Lindner ,  Volodymyr Boyko

IPC: C09K13/08 ,  C09K13/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/08 ,  C09K13/00 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134

Abstract: Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including:



(a) an oxidizing agent,
(b) an acid selected from an inorganic acid and an organic acid,
(c) an etchant including a source of fluoride ions,
(d) a polyvinylpyrrolidone (PVP), and
(e) water.

公开(公告)号：US20220290050A1

公开(公告)日：2022-09-15

申请号：US17624872

申请日：2020-06-19

Applicant: BASF SE

Inventor： Francisco Javier Lopez Villanueva ,  Yeni Burk ,  Daniel Loeffler ,  Jan Ole Mueller ,  Marcel Brill ,  Patrick Wilke ,  Jean-Pierre Berkan Lindner ,  Volodymyr Boyko

IPC: C09K13/08 ,  C09K13/00 ,  H01L21/306

Abstract: The invention relates to a composition for selectively etching a layer comprising a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition comprising: (a) an oxidizing agent, (b) an acid selected from an inorganic acid and an organic acid, 10 (c) an etchant comprising a source of fluoride ions, (d) a polyvinylpyrrolidone (PVP), and (e) water.