公开(公告)号：US20180044197A1

公开(公告)日：2018-02-15

申请号：US15554742

申请日：2016-02-24

申请人： BASF SE

发明人： Maximilian HEMGESBERG ,  Denis SCHWALL ,  Thorsten Martin STAUDT ,  Isabel van DRIESSCHE ,  Katrien DE KEUKELEERE ,  Jonathan DE ROO ,  Till GRUENDLING ,  Matthias MAIER ,  Michael BAECKER ,  Jan BENNEWITZ ,  Ron FEENSTRA ,  Hannes RIJCKAERT ,  Hens ZEGER

IPC分类号： C01G1/02 ,  C01G27/02 ,  H01L39/24 ,  C09C3/08 ,  C09D11/033 ,  C09D11/38 ,  C01G25/02 ,  C01G35/00

CPC分类号： C01G1/02 ,  C01G23/047 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2004/52 ,  C01P2004/64 ,  C09C1/00 ,  C09C1/3669 ,  C09C3/08 ,  C09D5/24 ,  C09D11/033 ,  C09D11/38 ,  H01L39/2425 ,  H01L39/2483

摘要： The present invention is in the field of nanoparticles, their preparation and their use as pinning centers in superconductors. In particular the present invention relates to nanoparticles comprising an oxide of Sr, Ba, Y, La, Ti, Zr, Hf, Nb, or Ta, wherein the nanoparticles have a weight average diameter of 1 to 30 nm and wherein an organic compound of general formula (I), (II) or (III) or an organic compound containing at least two carboxylic acid groups on the surface of the nanoparticles (I) (II) (III) wherein a is 0 to 5, b and c are independent of each other 1 to 14, n is 1 to 5, f is 0 to 5, p and q are independent of each other 1 to 14, and e and f are independent of each other 0 to 12.

公开(公告)号：US20180114892A1

公开(公告)日：2018-04-26

申请号：US15560826

申请日：2016-03-16

申请人： BASF SE

发明人： Ron FEENSTRA ,  Mario SADEWASSER ,  Michael BAECKER

IPC分类号： H01L39/24

CPC分类号： H01L39/2425 ,  H01L39/2432 ,  H01L39/2435 ,  H01L39/2438 ,  H01L39/2451

摘要： The present invention is in the field of processes for the production of high temperature super-conductor wires. In particular, the present invention relates to a process for the production of high temperature superconductor wires comprising heating a film comprising yttrium or a rare earth metal, an alkaline earth metal, and a transition metal to a temperature of at least 700° C. and cooling the film to a temperature below 300° C., wherein the heating and cooling is per-formed at least twice.