Abstract:
The present invention relates to a process for producing a composite material composed of at least one inorganic or organometallic phase and one organic polymer phase with aromatic or heteroaromatic structural units, wherein homo- or copolymerization of the monomers of the formula I is performed in the presence of a base selected from organic nitrogen bases and inorganic or organic oxo bases and fluoride salts.
Abstract:
The present invention relates to a process for producing composite materials formed from a) at least one inorganic or organometallic phase; and b) at least one organic polymer phase with aromatic or heteroaromatic structural units; comprising the homo- or copolymerization of at least one monomer of the formula I in which M is a metal or semimetal; R1, R2 may be the same or different and are each an Ar—C(Ra,Rb)— radical in which Ar is as defined in claim 1, or the R1Q and R2G radicals together are a radical of the formula A in which A is an aromatic or heteroaromatic ring fused to the double bond, m is 0, 1 or 2, and the R radicals may be the same or different and are as defined in claim 1; G, Q are each O, S or NH; Q is O, S or NH; and in which q, X, Y, R1′, R2′ are each as defined in claim 1; which comprises performing the polymerization of the monomers of the general formula I thermally in the absence or substantial absence of added catalysts.
Abstract:
The invention relates to a method for producing polyamide composite materials containing silicon, comprising the copolymerisation of: a) at least one silicon compound (SV) having at least one silicon atom, said silicon atom having at least one lactamyl group of formula (A) bonded by means of the nitrogen atom thereof; b) the method also comprises copolymerisation with at least one comonomer (CM) that is selected from among ammonium salts of dicarboxylic acids, amino acids, amino acid amides and lactams. In formula (A), m represents a whole number between 1 and 11, in particular in between 2 and 9, and specifically 3, and # represents the connection to the silicon atom of the compound (SV).