公开(公告)号：US20240405089A1

公开(公告)日：2024-12-05

申请号：US18798337

申请日：2024-08-08

Applicant: BEIJING INSTITUTE OF TECHNOLOGY

Inventor： Shujun YE ,  Yeliang WANG

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/417 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Vertically superimposed lateral gate-all-around metal-oxide-semiconductor field-effect transistors are provided, a structure of a novel three-dimensional integrated circuit such as a CMOS logic circuit that is composed of the vertically superimposed lateral gate-all-around transistors, a random-access memory and the like, and a manufacturing method for the novel three-dimensional integrated circuit are provided. The manufacturing method for the vertically superimposed lateral gate-all-around transistors includes: first preparing a monolayer channel and a source/drain, then protected with a sacrificial layer; preparing an insulating isolation layer, preparing above repeated structures on the insulating isolation layer; preparing an insulating spacer layer between the source/drain and a gate of each of the layers, a gate oxide, a gate, and a source/drain electrode in a unified manner, and finally preparing a connecting wire connected to the outside. The novel three-dimensional integrated circuit can be implemented by connecting the lateral gate-all-around transistors by means of a wire.

公开(公告)号：US20240251684A1

公开(公告)日：2024-07-25

申请号：US18626319

申请日：2024-04-03

Applicant: BEIJING INSTITUTE OF TECHNOLOGY ,  YANGTZE DELTA GRADUATE SCHOOL OF BIT (JIAXING)

Inventor： Shujun YE ,  Yeliang WANG

IPC: H10N50/01 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10N50/01 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80

Abstract: Provided are a magnetic random access memory device and a manufacturing method therefor. The device comprises magnetic thin film structure bodies, and an electrode arranged around side surfaces of the magnetic thin film structure body. The method is: preparing a bottom electrode, preparing a magnetic thin film structure body on the bottom electrode; preparing a non-magnetic thin film structure body on the magnetic thin film structure body, and preparing another magnetic thin film structure body on the non-magnetic thin film structure body; etching the two magnetic thin film structure bodies and the non-magnetic thin film structure body to form a MTJ device, preparing an insulating layer thin film on the outer surface of the device, and preparing a VCMA electrode on the periphery of the side face of the magnetic thin film structure body requiring voltage application; and preparing a wire connecting the VCMA electrode to outside.