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公开(公告)号:US2835810A
公开(公告)日:1958-05-20
申请号:US54164055
申请日:1955-10-20
Applicant: BELL TELEPHONE LABOR INC
Inventor: WALTZ MAYNARD C
IPC: H01L23/10 , H01L29/00 , H01L29/417
CPC classification number: H01L29/00 , H01L23/10 , H01L29/417 , H01L2924/0002 , H01L2924/00
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公开(公告)号:US2814589A
公开(公告)日:1957-11-26
申请号:US52606555
申请日:1955-08-02
Applicant: BELL TELEPHONE LABOR INC
Inventor: WALTZ MAYNARD C
IPC: C23C18/38 , C25D7/12 , H01L21/288
CPC classification number: C25D7/12 , C23C18/38 , H01L21/2885
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公开(公告)号:US2484596A
公开(公告)日:1949-10-11
申请号:US77660747
申请日:1947-09-27
Applicant: BELL TELEPHONE LABOR INC
Inventor: WALTZ MAYNARD C
IPC: H01R33/95
CPC classification number: H01R33/95
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公开(公告)号:US2740940A
公开(公告)日:1956-04-03
申请号:US19986850
申请日:1950-12-08
Applicant: BELL TELEPHONE LABOR INC
Inventor: BECKER JOSEPH A , WALTZ MAYNARD C
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5.Methods of selectively plating p-type material of a semiconductor containing a p-n junction 失效
Title translation: 选择性地镀覆包含p-n结的半导体的p型材料的方法公开(公告)号:US2694040A
公开(公告)日:1954-11-09
申请号:US26380451
申请日:1951-12-28
Applicant: BELL TELEPHONE LABOR INC
Inventor: DAVIS GUSTOFF W , WALTZ MAYNARD C
IPC: H01L21/288
CPC classification number: H01L21/2885 , Y10S204/07
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