HIGH-THROUGHPUT DEPOSITION OF A VOLTAGE-TUNABLE DIELECTRIC MATERIAL
    1.
    发明申请
    HIGH-THROUGHPUT DEPOSITION OF A VOLTAGE-TUNABLE DIELECTRIC MATERIAL 有权
    电压 - 电容材料的高通量沉积

    公开(公告)号:US20160351655A1

    公开(公告)日:2016-12-01

    申请号:US14727088

    申请日:2015-06-01

    摘要: High-throughput deposition of a voltage-tunable dielectric material onto a substrate comprising a conductive electrode is provided. Respective gradients in at least two grain size defining parameters of the deposition are simultaneously provided, the respective gradients occurring for a first time period thereby producing a smoothly changing columnar crystalline habit of the voltage-tunable dielectric material. When the first time period has ended, the deposition continues for a second time period where the grain size defining parameters are held constant. In particular, the smoothly changing columnar crystalline habit of the voltage-tunable dielectric material is intentionally distorted by simultaneously providing the respective gradients in the in at least two grain size defining parameters of the deposition.

    摘要翻译: 提供了将电压可调电介质材料高效地沉积到包括导电电极的基片上。 同时提供至少两个晶粒尺寸限定沉积参数的各自的梯度,在第一时间段内出现相应的梯度,从而产生电压可调介质材料的平滑变化的柱状结晶习性。 当第一时间段结束时,沉积继续进行第二时间段,其中晶粒尺寸限定参数保持恒定。 特别地,电压可调电介质材料的平滑变化的柱状结晶习性通过同时以沉积的至少两个晶粒尺寸限定参数提供各自的梯度而有意地变形。