公开(公告)号：US20160027812A1

公开(公告)日：2016-01-28

申请号：US14429501

申请日：2014-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： HeecheoI KIM ,  Youngsuk SONG ,  Seongyeol YOO ,  Seungjin CHOI

IPC: H01L27/12 ,  H01L23/31 ,  H01L23/00 ,  H01L29/66 ,  H01L23/528 ,  H01L21/56 ,  H01L21/441 ,  H01L29/24 ,  H01L23/522 ,  H01L29/786 ,  H01L21/768

CPC classification number: H01L27/1248 ,  H01L21/441 ,  H01L21/56 ,  H01L21/76831 ,  H01L23/3171 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78636 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2224/08052 ,  H01L2924/13069

Abstract: An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes: a gate electrode of a TFT and a gate insulation layer sequentially formed on a base substrate; a semiconductor active layer, an etch stop layer and a source electrode and a drain electrode of the TFT sequentially formed on a part of the gate insulation layer that corresponds to the gate electrode of the TFT, the source and drain electrodes of the TFT are respectively in contact with the semiconductor active layer by way of via holes. The array substrate further includes: a first insulation layer formed between the gate electrode of the TFT and the gate insulation layer and the gate electrode is in contact with the gate insulation layer at a channel region of the TFT between the source electrode and the drain electrode of the TFT.

Abstract translation: 公开了阵列基板，其制造方法和显示装置。 阵列基板包括：TFT的栅极电极和依次形成在基底基板上的栅极绝缘层; TFT的栅极绝缘层的一部分依次形成半导体有源层，蚀刻停止层以及源电极和漏电极，TFT的栅极电极和漏电极分别对应于TFT的栅电极 通过通孔与半导体活性层接触。 阵列基板还包括：形成在TFT的栅电极和栅极绝缘层之间的第一绝缘层和栅极电极在源极电极和漏电极之间的TFT的沟道区域处与栅极绝缘层接触 的TFT。