公开(公告)号：US20220406945A1

公开(公告)日：2022-12-22

申请号：US17772785

申请日：2021-05-21

申请人： ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

发明人： Chenglong WANG ,  Yezhou FANG ,  Feng LI ,  Lei YAO ,  Lei YAN ,  Kai LI ,  Lin HOU ,  Xiaogang ZHU ,  Yun GAO ,  Yanzhao PENG ,  Teng YE ,  Hua YANG

IPC分类号： H01L29/786 ,  H01L29/417 ,  G02B27/01

摘要： The present disclosure provides a thin film transistor, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor of the present disclosure includes: a base, and a gate, an active layer, a source and a drain located on the base, where the gate includes a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base, and the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other.

公开(公告)号：US20160109739A1

公开(公告)日：2016-04-21

申请号：US14366525

申请日：2013-04-18

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Shi SHU ,  Guanbao HUI ,  Teng YE ,  Chunsheng JIANG ,  Cuili GAI

IPC分类号： G02F1/1368 ,  H01L27/12 ,  G02F1/1362

CPC分类号： G02F1/1368 ,  G02F1/1362 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/78633

摘要： Embodiments of the disclosure provide a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. The method comprises steps of: S1. forming a thin film transistor on a base substrate; S2. forming a passivation layer thin film on the base substrate after the step S1; S3. forming a passivation layer via hole and a light-shielding pattern on the base substrate after the step S2; and S4. forming a color filter layer and a pixel electrode on the base substrate after the step S3. The pixel electrode is electrically connected to a drain electrode of the thin film transistor through the passivation layer via hole, and the color filter layer is in correspondence with a position of the pixel electrode.

摘要翻译： 本发明的实施例提供了TFT阵列基板，TFT阵列基板和显示装置的制造方法。 该方法包括以下步骤：S1。 在基底基板上形成薄膜晶体管; S2。 在步骤S1之后在基底基板上形成钝化层薄膜; S3。 在步骤S2之后在基底基板上形成钝化层通孔和遮光图案; 和S4。 在步骤S3之后在基底基板上形成滤色器层和像素电极。 像素电极通过钝化层通孔电连接到薄膜晶体管的漏电极，滤色器层与像素电极的位置对应。

公开(公告)号：US20220350196A1

公开(公告)日：2022-11-03

申请号：US17442102

申请日：2020-12-02

申请人： Ordos Yuansheng Optoelectronics Co., Ltd. ,  BOE Technology Group Co., Ltd.

发明人： Lei YAO ,  Yezhou FANG ,  Feng LI ,  Lei YAN ,  Kai LI ,  Chenglong WANG ,  Teng YE ,  Lin HOU ,  Xiaofang LI

IPC分类号： G02F1/1335 ,  G02B5/22 ,  G02B1/00

摘要： The present disclosure discloses a color filter substrate and a method for manufacturing the same, a display panel, and a display device, which relates to the field of display technologies. A black matrix layer in the color filter substrate includes a first film layer and a second film layer. As a material of the first film layer is different from a material of the second film layer, at least one of the first film layer and the second film layer is prepared without using a resin adhesive, and then the resin adhesive remaining in at least one through-hole of the first through-holes of the first film layer and the second through-holes of the second film layer can be reduced, and the display effect of the display device is ensured. In addition, reflectivity of the first film layer is relatively large and optical density of the second film layer is relatively large, which ensures that the color filter substrate according to the embodiments of the present disclosure can meet the design requirement of the black matrix layer.

公开(公告)号：US20220173050A1

公开(公告)日：2022-06-02

申请号：US17483822

申请日：2021-09-24

申请人： Ordos Yuansheng Optoelectronics Co., Ltd. ,  BOE Technology Group Co., Ltd.

发明人： Lei YAO ,  Feng LI ,  Lei YAN ,  Kai LI ,  Chenglong WANG ,  Teng YE ,  Lin HOU ,  Xiaofang LI

IPC分类号： H01L23/544 ,  H01L27/12

摘要： Provided are a display substrate motherboard and manufacturing method thereof, a display substrate and a display apparatus. The display substrate motherboard includes a substrate, a display substrate area on the substrate, and a mark area on the periphery of the display substrate area. The display substrate motherboard also includes a thin film transistor disposed in the display substrate area, a mark structure disposed in the mark area and a planarization layer disposed on one side of the thin film transistor away from the substrate, and the planarization layer includes a groove which is disposed at the corresponding position of the mark structure and extends along a direction close to the substrate, and an orthographic projection of the groove on the substrate covers an orthographic projection of the mark structure on the substrate.

公开(公告)号：US20170031193A1

公开(公告)日：2017-02-02

申请号：US15290492

申请日：2016-10-11

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Shi SHU ,  Guanbao HUI ,  Teng YE ,  Chunsheng JIANG ,  Cuili GAI

IPC分类号： G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1362

CPC分类号： H01L27/1262 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1248 ,  H01L29/41733 ,  H01L29/78633

摘要： Embodiments of the disclosure provide a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. The TFT array substrate comprises a thin film transistor and a pixel electrode formed on a base substrate, the pixel electrode is electrically connected with a drain electrode of the thin film transistor. The array substrate further comprises an light-shielding pattern provided above the thin film transistor.

摘要翻译： 本发明的实施例提供了TFT阵列基板，TFT阵列基板和显示装置的制造方法。 TFT阵列基板包括薄膜晶体管和形成在基底基板上的像素电极，像素电极与薄膜晶体管的漏极电连接。 阵列基板还包括设置在薄膜晶体管上方的遮光图案。