COLOR FILTER SUBSTRATE AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE

    公开(公告)号:US20220350196A1

    公开(公告)日:2022-11-03

    申请号:US17442102

    申请日:2020-12-02

    IPC分类号: G02F1/1335 G02B5/22 G02B1/00

    摘要: The present disclosure discloses a color filter substrate and a method for manufacturing the same, a display panel, and a display device, which relates to the field of display technologies. A black matrix layer in the color filter substrate includes a first film layer and a second film layer. As a material of the first film layer is different from a material of the second film layer, at least one of the first film layer and the second film layer is prepared without using a resin adhesive, and then the resin adhesive remaining in at least one through-hole of the first through-holes of the first film layer and the second through-holes of the second film layer can be reduced, and the display effect of the display device is ensured. In addition, reflectivity of the first film layer is relatively large and optical density of the second film layer is relatively large, which ensures that the color filter substrate according to the embodiments of the present disclosure can meet the design requirement of the black matrix layer.

    MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE, TFT ARRAY SUBSTRATE AND DISPLAY DEVICE
    4.
    发明申请
    MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE, TFT ARRAY SUBSTRATE AND DISPLAY DEVICE 有权
    TFT阵列基板,TFT阵列基板和显示装置的制造方法

    公开(公告)号:US20160109739A1

    公开(公告)日:2016-04-21

    申请号:US14366525

    申请日:2013-04-18

    摘要: Embodiments of the disclosure provide a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. The method comprises steps of: S1. forming a thin film transistor on a base substrate; S2. forming a passivation layer thin film on the base substrate after the step S1; S3. forming a passivation layer via hole and a light-shielding pattern on the base substrate after the step S2; and S4. forming a color filter layer and a pixel electrode on the base substrate after the step S3. The pixel electrode is electrically connected to a drain electrode of the thin film transistor through the passivation layer via hole, and the color filter layer is in correspondence with a position of the pixel electrode.

    摘要翻译: 本发明的实施例提供了TFT阵列基板,TFT阵列基板和显示装置的制造方法。 该方法包括以下步骤:S1。 在基底基板上形成薄膜晶体管; S2。 在步骤S1之后在基底基板上形成钝化层薄膜; S3。 在步骤S2之后在基底基板上形成钝化层通孔和遮光图案; 和S4。 在步骤S3之后在基底基板上形成滤色器层和像素电极。 像素电极通过钝化层通孔电连接到薄膜晶体管的漏电极,滤色器层与像素电极的位置对应。