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公开(公告)号：US20160018923A1
公开(公告)日：2016-01-21
申请号：US14422746
申请日：2014-04-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenlin ZHANG , Zhanfeng CAO , Guanbao HUI
CPC classification number: G06F3/044 , G06F3/016 , G06F3/0412 , G06F2203/04103 , G06F2203/04104 , G06F2203/04107 , G09G3/36 , G09G2300/04
Abstract: The present invention relates to the field of display technology, and particularly to a double-sided touch display device which comprises a touch feedback electrode, a first touch receiving electrode and a second touch receiving electrode, wherein the first touch receiving electrode and the second touch receiving electrode are provided at both sides of the touch feedback electrode, respectively. The double-sided touch display device achieve functions of both double-sided touch and transparent display, and has a simple structure and low production cost.
Abstract translation: 本发明涉及显示技术领域，特别涉及包括触摸反馈电极，第一触摸接收电极和第二触摸接收电极的双面触摸显示装置，其中第一触摸接收电极和第二触摸 接触电极分别设置在触摸反馈电极的两侧。 双面触摸显示装置实现双面触摸和透明显示的功能，结构简单，生产成本低。
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Patent Agency Ranking
2.发明申请公开(公告)号：US20200220020A1
公开(公告)日：2020-07-09
申请号：US16608549
申请日：2019-04-25
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenlin ZHANG , Jianming SUN , Hehe HU
IPC: H01L29/786 , H01L27/12
Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.
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3.发明申请公开(公告)号：US20190233299A1
公开(公告)日：2019-08-01
申请号：US16344000
申请日：2018-09-17
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenlin ZHANG , Ce NING , Hehe HU , Zhengliang LI
IPC: C01G15/00 , H01L29/786
CPC classification number: C01G15/006 , C01P2002/72 , C01P2004/61 , H01L29/7869
Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.
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公开(公告)号：US20210135144A1
公开(公告)日：2021-05-06
申请号：US16956983
申请日：2020-02-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenlin ZHANG , Wei YANG
Abstract: The present disclosure relates to the field of display technology, and provides a display substrate, its manufacturing method, and a display device. The display substrate includes a display region and a GOA region. An active layer of a TFT at the GOA region at least includes a first oxide semiconductor layer and a second oxide semiconductor layer arranged on the first oxide semiconductor layer, and the first oxide semiconductor layer is arranged between the second oxide semiconductor layer and a base substrate of the display substrate and has a carrier mobility of smaller than the second oxide semiconductor layer.
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公开(公告)号：US20190243497A1
公开(公告)日：2019-08-08
申请号：US16319982
申请日：2018-05-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenlin ZHANG , Wei YANG , Ce NING
Abstract: Provided are an array substrate and preparation method therefor, and a display apparatus. The array substrate includes: a substrate, the substrate having a first TFT region, a touch control region and a second TFT region; a photosensitive PN junction, the photosensitive PN junction being provided in the touch control region; a first thin-film transistor, provided in the first TFT region, and electrically connected to the photosensitive PN junction; and a second thin-film transistor, provided in the second TFT region, and electrically connected to a pixel electrode.
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公开(公告)号：US20200286929A1
公开(公告)日：2020-09-10
申请号：US16318740
申请日：2018-04-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhengliang LI , Ce NING , Song LIU , Wenlin ZHANG , Xuefei SUN
IPC: H01L27/12
Abstract: The present disclosure provides a transistor, an array substrate and a method of manufacturing the array substrate, and a display device. The method of manufacturing the array substrate comprises: depositing a plurality of silicon oxide layers on an active layer of a transistor; and depositing a silicon oxynitride layer over the plurality of silicon oxide layers.
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