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公开(公告)号：US20210222064A1
公开(公告)日：2021-07-22
申请号：US16633806
申请日：2019-01-18
Inventor： Aidi ZHANG
Abstract: A quantum dot structure and a manufacturing method thereof, an optical film and a manufacturing method thereof, and a display device. The quantum dot structure includes: a quantum dot including a quantum dot body and a quantum dot surface layer; and an oxide layer on a surface of the quantum dot to partly cover the surface of the quantum dot. The quantum dot surface layer includes a negative ion, and the oxide layer is combined with the negative ion through a coordinate bond.
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公开(公告)号：US20210388259A1
公开(公告)日：2021-12-16
申请号：US17286428
申请日：2020-09-11
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenhai MEI , Zhenqi ZHANG , Aidi ZHANG , Xiaoyuan ZHANG , Haowei WANG
Abstract: The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.
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3.发明申请公开(公告)号：US20210210706A1
公开(公告)日：2021-07-08
申请号：US17041419
申请日：2020-03-11
Inventor： Gang YU , Aidi ZHANG
Abstract: A quantum dot and a manufacturing method thereof, a quantum dot light emitting diode and a display panel are provided. The quantum dot includes: a quantum dot core, a charge transition layer coating at an outer side of the quantum dot core, and a quantum dot shell coating at an outer side of the charge transition layer. The charge transition layer includes a host material and metal ions doped in the host material, the metal ions are metal ions with variable charge valence states, and the charge valence states of the metal ions include a charge valence state of a cation in the quantum dot core and a charge valence state of a cation in the quantum dot shell.
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4.发明公开公开(公告)号：US20230174855A1
公开(公告)日：2023-06-08
申请号：US17435369
申请日：2021-02-26
Inventor： Aidi ZHANG
CPC classification number: C09K11/665 , C09K11/025
Abstract: The embodiments of the present disclosure provides a quantum dot light emitting device, a light emitting layer and a manufacturing method thereof, and a display device. The device includes a perovskite quantum dot layer containing a second halogen element; a siloxane polymer film layer which is provided on a side of the perovskite quantum dot layer containing the second halogen element. The perovskite quantum dot layer containing the second halogen element and the siloxane polymer film layer are connected by a chemical bond.
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5.发明申请公开(公告)号：US20230055663A1
公开(公告)日：2023-02-23
申请号：US17792201
申请日：2021-05-14
Inventor： Aidi ZHANG
Abstract: A light-emitting substrate, comprising a base, a pixel defining layer arranged on the base, and a plurality of light-emitting devices. The pixel defining layer is provided with a plurality of openings, and each light-emitting device comprises a quantum dot light-emitting pattern arranged in an opening, wherein each opening has a side wall, the side wall comprises a first portion and a second portion, the first portion is the portion of the side wall that is in contact with the quantum dot light-emitting pattern, and the second portion is the portion of the side wall that is away from the base relative to the first portion. The light-emitting substrate further comprises at least one blocking unit, each blocking unit comprises at least one siloxane chain segment, and each siloxane chain segment comprises at least one silicon oxygen bond; and each blocking unit is located in an opening, and at least one siloxane chain segment in each blocking unit is grafted to the second portion of a corresponding side wall.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20220392929A1
公开(公告)日：2022-12-08
申请号：US17775735
申请日：2021-05-07
Inventor： Aidi ZHANG
Abstract: Disclosed are an array substrate and a fabricating method therefor, a display panel, and a display device, and relating to the technical field of display. The method comprises: forming a patterned film layer on one side of a substrate, the patterned film layer comprising a plurality of recesses; and palcing a first precursor structure in the recesses, and the material of the first precursor structure comprises a first precursor; and placeing in the environment of a gaseous second precursor the substrate having the first precursor structure formed thereon to cause the reaction between the gaseous second precursor and the first precursor structure to form a perovskite crystal structure, wherein one of the first precursor and the second precursor comprises a metal halide, and the other comprises one of a formamidine halide, a methylamine halide, a cesium halide, and hydrogen sulfide, thereby achieving the manufacture of a perovskite microarray structure.
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公开(公告)号：US20220384758A1
公开(公告)日：2022-12-01
申请号：US16982063
申请日：2020-03-30
Applicant: BOE Technology Group Co., Ltd.
Inventor： Wenhai MEI , Zhenqi ZHANG , Aidi ZHANG
Abstract: A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.
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公开(公告)号：US20220278291A1
公开(公告)日：2022-09-01
申请号：US17635993
申请日：2021-02-02
Inventor： Aidi ZHANG , Yichi ZHANG , Jinglu BAI
Abstract: Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.
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公开(公告)号：US20220064523A1
公开(公告)日：2022-03-03
申请号：US17214114
申请日：2021-03-26
Inventor： Aidi ZHANG
Abstract: The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.
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公开(公告)号：US20220025253A9
公开(公告)日：2022-01-27
申请号：US16640172
申请日：2019-05-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Aidi ZHANG
Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.
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