公开(公告)号：US20210408095A1

公开(公告)日：2021-12-30

申请号：US17290495

申请日：2020-09-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin ZHOU ,  Rui HUANG ,  Wei YANG ,  Lizhong WANG ,  Zhaohui QIANG ,  Tao YANG ,  Li QIANG

IPC: H01L27/146 ,  H01L27/32 ,  H01L51/56 ,  G06K9/00

Abstract: The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

公开(公告)号：US20220020780A1

公开(公告)日：2022-01-20

申请号：US17413221

申请日：2020-06-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui QIANG ,  Li QIANG ,  Chao LUO ,  Huiqin ZHANG ,  Rui HUANG ,  Zhi WANG

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.

公开(公告)号：US20210020613A1

公开(公告)日：2021-01-21

申请号：US16904584

申请日：2020-06-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Li QIANG ,  Zhaohui QIANG ,  Tao YANG ,  Dongsheng YIN

IPC: H01L25/075 ,  H01L25/16

Abstract: A light emitting diode, a display substrate and a transfer method are disclosed. The transfer method includes: disposing a display substrate on an adsorption carrier plate, and absorbing, by a transport head, multiple light emitting diodes from a donor substrate; dropping, by the transport head, the multiple light emitting diodes onto the display substrate, the light emitting diodes falling into positioning holes on the display substrate; and absorbing and removing, by the transport head, a light emitting diode on the display substrate which does not fall into a positioning hole.

公开(公告)号：US20220416091A1

公开(公告)日：2022-12-29

申请号：US17776923

申请日：2021-06-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui QIANG ,  Chao LI ,  Huiqin ZHANG ,  Li QIANG ,  Feng GUAN ,  Zhiwei LIANG

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode region has a second ion doping concentration. The first electrode and the second electrode are disposed on a side of the active layer in the thickness direction. The first electrode is coupled to the first electrode region, and the second electrode is coupled to the second electrode region. The third doped pattern is disposed between the first electrode and the first electrode region, and in direct contact with the first electrode and the first electrode region. The third doped pattern has a third ion doping concentration, and the third ion doping concentration is different from the first ion doping concentration.