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公开(公告)号：US20210005769A1
公开(公告)日：2021-01-07
申请号：US16909526
申请日：2020-06-23
发明人： Chao LI , Jianhua DU , Feng GUAN , Yupeng GAO , Zhaohui QIANG , Zhi WANG , Yang LYU , Chao LUO
IPC分类号： H01L31/105 , H01L27/12 , H01L31/12 , H01L31/18
摘要： The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.
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公开(公告)号：US20210408095A1
公开(公告)日：2021-12-30
申请号：US17290495
申请日：2020-09-23
发明人： Tianmin ZHOU , Rui HUANG , Wei YANG , Lizhong WANG , Zhaohui QIANG , Tao YANG , Li QIANG
IPC分类号： H01L27/146 , H01L27/32 , H01L51/56 , G06K9/00
摘要： The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.
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公开(公告)号：US20210111200A1
公开(公告)日：2021-04-15
申请号：US16846888
申请日：2020-04-13
发明人： Yupeng GAO , Guangcai YUAN , Feng GUAN , Zhi WANG , Jianhua DU , Zhaohui QIANG , Chao LI
IPC分类号： H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66
摘要： The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.
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公开(公告)号：US20220028898A1
公开(公告)日：2022-01-27
申请号：US17354007
申请日：2021-06-22
发明人： Xinhong LU , Fangzhen ZHANG , Guangcai YUAN , Zhanfeng CAO , Jiushi WANG , Ke WANG , Xiaoyan ZHU , Qi QI , Jingshang ZHOU , Zhaohui QIANG , Zhiwei LIANG
摘要： The present disclosure provides a driving substrate including: a flexible substrate base, a plurality of thin film transistors on the flexible substrate base and a first conductive pattern layer on a side of the thin film transistors distal to the flexible substrate base. The first conductive pattern layer includes: a plurality of first connection terminals in the display region and a plurality of signal supply lines in the bendable region. A first number of first connection terminals are electrically coupled to first electrodes of the plurality of thin film transistors. The plurality of signal supply lines are coupled to a second number of first connection terminals other than the first number of first connection terminals. At least one inorganic insulating layer including a hollowed-out pattern in the bendable region is between the first conductive pattern layer and the flexible substrate base.
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公开(公告)号：US20210028315A1
公开(公告)日：2021-01-28
申请号：US16641078
申请日：2019-02-22
发明人： Zhaohui QIANG , Feng GUAN , Zhi WANG , Yupeng GAO , Yang LYU , Chao LI , Jianhua DU , Lei CHEN
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L29/417
摘要： The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.
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6.发明申请公开(公告)号：US20220020780A1
公开(公告)日：2022-01-20
申请号：US17413221
申请日：2020-06-09
发明人： Zhaohui QIANG , Li QIANG , Chao LUO , Huiqin ZHANG , Rui HUANG , Zhi WANG
IPC分类号： H01L27/12 , H01L29/423 , H01L29/786
摘要： A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.
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公开(公告)号：US20210217909A1
公开(公告)日：2021-07-15
申请号：US16958120
申请日：2020-01-17
发明人： Jianhua DU , Chao LI , Zhaohui QIANG , Yupeng GAO , Feng GUAN , Rui HUANG , Zhi WANG , Yang LV , Chao LUO
IPC分类号： H01L31/0224 , H01L31/20 , H01L31/18 , H01L31/0376
摘要： The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.
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公开(公告)号：US20210020613A1
公开(公告)日：2021-01-21
申请号：US16904584
申请日：2020-06-18
发明人： Li QIANG , Zhaohui QIANG , Tao YANG , Dongsheng YIN
IPC分类号： H01L25/075 , H01L25/16
摘要： A light emitting diode, a display substrate and a transfer method are disclosed. The transfer method includes: disposing a display substrate on an adsorption carrier plate, and absorbing, by a transport head, multiple light emitting diodes from a donor substrate; dropping, by the transport head, the multiple light emitting diodes onto the display substrate, the light emitting diodes falling into positioning holes on the display substrate; and absorbing and removing, by the transport head, a light emitting diode on the display substrate which does not fall into a positioning hole.
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公开(公告)号：US20220416091A1
公开(公告)日：2022-12-29
申请号：US17776923
申请日：2021-06-15
发明人： Zhaohui QIANG , Chao LI , Huiqin ZHANG , Li QIANG , Feng GUAN , Zhiwei LIANG
IPC分类号： H01L29/786 , H01L29/66 , H01L27/32
摘要： A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode region has a second ion doping concentration. The first electrode and the second electrode are disposed on a side of the active layer in the thickness direction. The first electrode is coupled to the first electrode region, and the second electrode is coupled to the second electrode region. The third doped pattern is disposed between the first electrode and the first electrode region, and in direct contact with the first electrode and the first electrode region. The third doped pattern has a third ion doping concentration, and the third ion doping concentration is different from the first ion doping concentration.
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公开(公告)号：US20220375966A1
公开(公告)日：2022-11-24
申请号：US17772234
申请日：2021-05-18
发明人： Xue DONG , Guangcai YUAN , Ce NING , Zhiwei LIANG , Feng GUAN , Zhaohui QIANG , Yingwei LIU , Ke WANG , Zhanfeng CAO
摘要： An array substrate includes a base substrate, a driving circuit layer, and a functional device layer which are sequentially stacked; the driving circuit layer is provided with first driving circuits, and each first driving circuit at least comprises a driving transistor; and the driving circuit layer comprises a first gate layer, a first gate insulation layer, a semiconductor layer, a second gate insulation layer, a second gate layer, an interlayer dielectric layer, and a source-drain metal layer which are sequentially stacked on one side of the base substrate.
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