THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS

    公开(公告)号:US20220416091A1

    公开(公告)日:2022-12-29

    申请号:US17776923

    申请日:2021-06-15

    摘要: A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode region has a second ion doping concentration. The first electrode and the second electrode are disposed on a side of the active layer in the thickness direction. The first electrode is coupled to the first electrode region, and the second electrode is coupled to the second electrode region. The third doped pattern is disposed between the first electrode and the first electrode region, and in direct contact with the first electrode and the first electrode region. The third doped pattern has a third ion doping concentration, and the third ion doping concentration is different from the first ion doping concentration.

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND DISPLAY DEVICE

    公开(公告)号:US20220115413A1

    公开(公告)日:2022-04-14

    申请号:US17263748

    申请日:2020-03-27

    IPC分类号: H01L27/12

    摘要: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

    DISPLAY SUBSTRATE, DISPLAY PANEL AND DISPLAY APPARATUS

    公开(公告)号:US20230176434A1

    公开(公告)日:2023-06-08

    申请号:US17922466

    申请日:2021-02-19

    IPC分类号: G02F1/1362

    CPC分类号: G02F1/136286

    摘要: A display substrate, a display panel and a display apparatus. The display substrate including: a substrate having a display area; a plurality of sub-pixels arranged in an array and located in the display area of the substrate; and a plurality of data lines arranged in the display area of the substrate; the plurality of data lines extend in a column direction of the sub-pixels, and a column of sub-pixels are electrically connected with at least one of the plurality of data lines; and for at least one of the plurality of data lines, a side of an orthographic projection of the at least one of the plurality of data lines on the substrate facing orthographic projections of sub-pixels electrically connected with the at least one of the plurality of data lines has a plurality of first concave-convex structures.

    DISPLAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20220137445A1

    公开(公告)日:2022-05-05

    申请号:US17259911

    申请日:2020-04-03

    摘要: The embodiments of the present disclosure relate to the field of display technology, and in particular to a display substrate, a display panel, and a display device. The display substrate includes a first electrode, a first wire, and a second wire; the first electrode is provided with a plurality of slits; the first wire is provided on a side of the first electrode, and a first gap is provided between the first wire and the first electrode, and the first wire being electrically connected to the first electrode; a second wire provided on a side of the first electrode away from the first wire, and a second gap being provided between the second wire and the first electrode; wherein each of the slits is provided with a first end and a second end opposed to each other, and the first end is close to the first wire, and the second end is close to the second wire, and a light-transmitting part of the first end is larger than a light-transmitting part of the second end. The electric field disorder of the first end is better than the electric field disorder of the second, so that the weak zone at the first end is larger than the weak zone at the second end. By increasing the light-transmitting part of the first end, the weak zone at the first end becomes smaller, thereby making the weak zone of the first end is basically the same as the weak zone of the second end.

    MICRO-NANO CHANNEL STRUCTURE, SENSOR AND MANUFACTURING METHOD THEREOF, AND MICROFLUIDIC DEVICE

    公开(公告)号:US20210229977A1

    公开(公告)日:2021-07-29

    申请号:US16753362

    申请日:2019-04-03

    IPC分类号: B81B1/00 B81C1/00 B01L3/00

    摘要: A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.