公开(公告)号：US20220020780A1

公开(公告)日：2022-01-20

申请号：US17413221

申请日：2020-06-09

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Zhaohui QIANG ,  Li QIANG ,  Chao LUO ,  Huiqin ZHANG ,  Rui HUANG ,  Zhi WANG

IPC分类号： H01L27/12 ,  H01L29/423 ,  H01L29/786

摘要： A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.

公开(公告)号：US20210217909A1

公开(公告)日：2021-07-15

申请号：US16958120

申请日：2020-01-17

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jianhua DU ,  Chao LI ,  Zhaohui QIANG ,  Yupeng GAO ,  Feng GUAN ,  Rui HUANG ,  Zhi WANG ,  Yang LV ,  Chao LUO

IPC分类号： H01L31/0224 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0376

摘要： The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US20220115413A1

公开(公告)日：2022-04-14

申请号：US17263748

申请日：2020-03-27

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Chao LUO ,  Feng GUAN ,  Zhi WANG ,  Jianhua DU ,  Yang LV ,  Zhaohui QIANG ,  Chao LI

IPC分类号： H01L27/12

摘要： A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

公开(公告)号：US20210005769A1

公开(公告)日：2021-01-07

申请号：US16909526

申请日：2020-06-23

申请人： BOE Technology Group Co., Ltd.

发明人： Chao LI ,  Jianhua DU ,  Feng GUAN ,  Yupeng GAO ,  Zhaohui QIANG ,  Zhi WANG ,  Yang LYU ,  Chao LUO

IPC分类号： H01L31/105 ,  H01L27/12 ,  H01L31/12 ,  H01L31/18

摘要： The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.