DISPLAY BACKPLANE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE USING THE SAME

    公开(公告)号:US20210167143A1

    公开(公告)日:2021-06-03

    申请号:US16835722

    申请日:2020-03-31

    Abstract: The disclosure provides a display backplane, a method of manufacturing the same, and a display device using the same. The display backplane includes a substrate; a thin film transistor structure layer disposed on one side of the substrate and including thin film transistors, a gate insulating layer, and an interlayer dielectric layer, where an etching rate of the interlayer dielectric layer carried out under an HF atmosphere condition is less than 2 Å/S; and photosensitive devices spaced apart from the thin film transistor structure layer and disposed on one side of the thin film transistor structure layer away from the substrate. The interlayer dielectric layer has a high compactness, and can effectively block H from entering the active layer of the thin film transistor to conductorize the active layer, thus guaranteeing good optical characteristics of the thin film transistor while carrying out optical compensation.

    THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL

    公开(公告)号:US20230036385A1

    公开(公告)日:2023-02-02

    申请号:US17772689

    申请日:2021-06-24

    Abstract: The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

    ORGANIC ELECTROLUMINESCENT DISPLAY SUBSTRATE AND MANUFACTURING METHOD, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20220352283A1

    公开(公告)日:2022-11-03

    申请号:US17429935

    申请日:2020-11-13

    Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

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