NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    4.
    发明授权
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号:US07692021B2

    公开(公告)日:2010-04-06

    申请号:US11508925

    申请日:2006-08-24

    IPC分类号: C07D277/20 C07D277/60

    摘要: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译: 本文公开了NPN型低分子芳环化合物,由这些化合物形成的有机半导体层,其表现出改进的电稳定性,并且使用基于溶液的方法形成这种层的方法,例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜,然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜,该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料,从而改善所得器件的电性能。

    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    6.
    发明申请
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号:US20070166871A1

    公开(公告)日:2007-07-19

    申请号:US11508925

    申请日:2006-08-24

    摘要: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译: 本文公开了NPN型低分子芳环化合物,由这些化合物形成的有机半导体层,其表现出改进的电稳定性,并且使用基于溶液的方法形成这种层的方法,例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜,然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜,该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料,从而改善所得器件的电性能。

    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same
    9.
    发明授权
    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权
    有机聚合物半导体,其制备方法和使用其的双极性有机薄膜晶体管

    公开(公告)号:US08354666B2

    公开(公告)日:2013-01-15

    申请号:US11790755

    申请日:2007-04-27

    IPC分类号: H01L51/00

    摘要: Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

    摘要翻译: 公开了有机聚合物半导体,使用该有机聚合物半导体的双极性有机薄膜晶体管,包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体,其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环,因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层(例如有机薄膜晶体管,使用这种有机聚合物半导体的双极性有机薄膜晶体管),包括双极性有机薄膜晶体管的电子器件和方法 的制造。

    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same
    10.
    发明申请
    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权
    有机聚合物半导体,其制备方法和使用其的双极性有机薄膜晶体管

    公开(公告)号:US20080099758A1

    公开(公告)日:2008-05-01

    申请号:US11790755

    申请日:2007-04-27

    IPC分类号: H01L51/00 H01L51/40

    摘要: Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

    摘要翻译: 公开了有机聚合物半导体,使用该有机聚合物半导体的双极性有机薄膜晶体管,包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体,其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环,因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层(例如有机薄膜晶体管,使用这种有机聚合物半导体的双极性有机薄膜晶体管),包括双极性有机薄膜晶体管的电子器件和方法 的制造。