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公开(公告)号：US09246330B2
公开(公告)日：2016-01-26
申请号：US13457155
申请日：2012-04-26
申请人： Benyamin Buller , Dmitriy Marinskiy
发明人： Benyamin Buller , Dmitriy Marinskiy
CPC分类号： H02J1/06 , Y10T307/50
摘要： A method and system for operating a photovoltaic module includes providing a reversed electrical bias to the photovoltaic module.
摘要翻译： 用于操作光伏模块的方法和系统包括向光伏模块提供反向的电偏压。
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公开(公告)号：US20120280567A1
公开(公告)日：2012-11-08
申请号：US13457155
申请日：2012-04-26
申请人： Benyamin Buller , Dmitriy Marinskiy
发明人： Benyamin Buller , Dmitriy Marinskiy
IPC分类号： H02J1/00
CPC分类号： H02J1/06 , Y10T307/50
摘要： A method and system for operating a photovoltaic module includes providing a reversed electrical bias to the photovoltaic module.
摘要翻译： 用于操作光伏模块的方法和系统包括向光伏模块提供反向的电偏压。
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公开(公告)号：US08798961B2
公开(公告)日：2014-08-05
申请号：US13221491
申请日：2011-08-30
摘要： A system for measuring quantum efficiency in a sample photovoltaic cell may include a Fourier transform infrared spectrometer. One or more light source for illuminating the photovoltaic cell in a wavelength range of interest are provided.
摘要翻译： 用于测量样品光伏电池中的量子效率的系统可以包括傅里叶变换红外光谱仪。 提供了用于在感兴趣的波长范围内照射光伏电池的一个或多个光源。
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4.发明授权Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers 有权用于获取半导体产品晶片的微型测试区域上的充电电压数据的非接触式方法公开(公告)号：US07202691B2
公开(公告)日：2007-04-10
申请号：US11191093
申请日：2005-07-27
IPC分类号： G01R31/26
CPC分类号： G01R31/312 , G01R29/24
摘要： A non-contact method is described for acquiring the accurate charge-voltage data on miniature test sites of semiconductor wafer wherein the test sites are smaller than 100 μm times 100 μm. The method includes recognizing the designated test site, properly aligning it, depositing a prescribed dose of ionic charge on the surface of the test site, and precise measuring of the resulting voltage change on the surface of the test site. The method further compromises measuring of the said voltage change in the dark and/or under strong illumination without interference from the laser beam employed in the Kelvin Force probe measurement of the voltage. The method enables acquiring of charge-voltage data without contacting the measured surface of the wafer and without contaminating the wafer. Thus, the measured wafer can be returned to IC fabrication line for further processing.
摘要翻译： 描述了一种用于在半导体晶片的微型测试点上获得准确的充电电压数据的非接触方法，其中测试位置小于100mum倍100mum。 该方法包括识别指定的测试部位，使其正确对准，在试验部位的表面上沉积规定剂量的离子电荷，并精确测量测试部位表面上产生的电压变化。 该方法进一步危及在暗和/或强照射下的所述电压变化的测量，而不受来自开尔文力探针测量电压的激光束的干扰。 该方法能够在不接触测量的晶片表面而不污染晶片的情况下获取电荷电压数据。 因此，可以将测量的晶片返回到IC制造线进行进一步处理。
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5.发明申请Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers 有权用于获取半导体产品晶片的微型测试区域上的充电电压数据的非接触式方法公开(公告)号：US20060267622A1
公开(公告)日：2006-11-30
申请号：US11191093
申请日：2005-07-27
IPC分类号： G01R31/26
CPC分类号： G01R31/312 , G01R29/24
摘要： A non-contact method is described for acquiring the accurate charge-voltage data on miniature test sites of semiconductor wafer wherein the test sites are smaller than 100 μm times 100 μm. The method includes recognizing the designated test site, properly aligning it, depositing a prescribed dose of ionic charge on the surface of the test site, and precise measuring of the resulting voltage change on the surface of the test site. The method further compromises measuring of the said voltage change in the dark and/or under strong illumination without interference from the laser beam employed in the Kelvin Force probe measurement of the voltage. The method enables acquiring of charge-voltage data without contacting the measured surface of the wafer and without contaminating the wafer. Thus, the measured wafer can be returned to IC fabrication line for further processing. From the acquired charge-voltage data the electric parameters can be determined that characterize the dielectric layer on semiconductor substrate, the semiconductor-dielectric interface and the semiconductor surface region.
摘要翻译： 描述了一种用于在半导体晶片的微型测试点上获得准确的充电电压数据的非接触方法，其中测试位置小于100mum倍100mum。 该方法包括识别指定的测试部位，使其正确对准，在试验部位的表面上沉积规定剂量的离子电荷，并精确测量测试部位表面上产生的电压变化。 该方法进一步危及在暗和/或强照射下的所述电压变化的测量，而不受来自开尔文力探针测量电压的激光束的干扰。 该方法能够在不接触测量的晶片表面而不污染晶片的情况下获取电荷电压数据。 因此，可以将测量的晶片返回到IC制造线进行进一步处理。 从获取的电荷电压数据可以确定表征半导体衬底，半导体 - 电介质界面和半导体表面区域上的电介质层的电参数。
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6.发明申请Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration 失效在非接触表面光电压测量中的自校准耗尽电容和掺杂剂浓度公开(公告)号：US20060208256A1
公开(公告)日：2006-09-21
申请号：US11377632
申请日：2006-03-16
申请人： Dmitriy Marinskiy
发明人： Dmitriy Marinskiy
IPC分类号： H01L23/58
CPC分类号： H01L22/14 , G01R31/2648
摘要： The surface photovoltage dopant concentration measurement of a semiconductor wafer is calibrated by biasing the semiconductor wafer into an avalanche breakdown condition in a surface depletion region; determining a contact potential difference value corresponding to an avalanche breakdown; determining small signal ac-surface photovoltage value corresponding to an avalanche breakdown; and using the values of the contact potential and the surface photovoltage to calculate a calibration constant that relates depletion layer capacitance and an inverse of the surface photovoltage.
摘要翻译： 半导体晶片的表面光电压掺杂浓度测量通过将半导体晶片偏置在表面耗尽区中的雪崩击穿状态来校准; 确定对应于雪崩击穿的接触电位差值; 确定对应于雪崩击穿的小信号交流表面光电压值; 并且使用接触电位和表面光电压的值来计算与耗尽层电容和表面光电压相反的校准常数。
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公开(公告)号：US20120053899A1
公开(公告)日：2012-03-01
申请号：US13221491
申请日：2011-08-30
摘要： A system for measuring quantum efficiency in a sample photovoltaic cell may include a Fourier transform infrared spectrometer. One or more light source for illuminating the photovoltaic cell in a wavelength range of interest are provided.
摘要翻译： 用于测量样品光伏电池中的量子效率的系统可以包括傅里叶变换红外光谱仪。 提供了用于在感兴趣的波长范围内照射光伏电池的一个或多个光源。
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8.发明授权Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration 失效在非接触表面光电压测量中的自校准耗尽电容和掺杂剂浓度公开(公告)号：US07405580B2
公开(公告)日：2008-07-29
申请号：US11377632
申请日：2006-03-16
申请人： Dmitriy Marinskiy
发明人： Dmitriy Marinskiy
IPC分类号： G01R31/26
CPC分类号： H01L22/14 , G01R31/2648
摘要： The surface photovoltage dopant concentration measurement of a semiconductor wafer is calibrated by biasing the semiconductor wafer into an avalanche breakdown condition in a surface depletion region; determining a contact potential difference value corresponding to an avalanche breakdown; determining small signal ac-surface photovoltage value corresponding to an avalanche breakdown; and using the values of the contact potential and the surface photovoltage to calculate a calibration constant that relates depletion layer capacitance and an inverse of the surface photovoltage.
摘要翻译： 半导体晶片的表面光电压掺杂浓度测量通过将半导体晶片偏置在表面耗尽区中的雪崩击穿状态来校准; 确定对应于雪崩击穿的接触电位差值; 确定对应于雪崩击穿的小信号交流表面光电压值; 并且使用接触电位和表面光电压的值来计算与耗尽层电容和表面光电压相反的校准常数。
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