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公开(公告)号：US07829360B2
公开(公告)日：2010-11-09
申请号：US11898837
申请日：2007-09-17
申请人： Bernabe J. Arruza , Ronald Bozak , Kenneth Gilbert Roessler , Andrew Dinsdale , Tod Evan Robinson , David Brinkley
发明人： Bernabe J. Arruza , Ronald Bozak , Kenneth Gilbert Roessler , Andrew Dinsdale , Tod Evan Robinson , David Brinkley
IPC分类号： H01L21/00
CPC分类号： B81C1/00634 , B81C2201/0146 , Y10T29/49778
摘要： A method of nanomachining is provided. The method includes plunging a nanometer-scaled tip into a surface of a substrate at a first location in a first direction that is substantially perpendicular to the surface, thereby displacing a first portion of the substrate with the tip. The method also includes withdrawing the tip from the substrate in a second direction that is substantially opposite to the first direction. The method further includes moving at least one of the tip and the substrate laterally relative to each other. In addition, the method also includes plunging the tip into the substrate at a second location in a third direction that is substantially parallel to the first direction, thereby displacing a second portion of the substrate with the tip and withdrawing the tip from the substrate in a fourth direction that is substantially opposite to the third direction.
摘要翻译： 提供了一种纳米加工的方法。 该方法包括在基本上垂直于表面的第一方向上的第一位置处将纳米级尖端突入基片的表面，从而使基片的第一部分与尖端移位。 该方法还包括在基本上与第一方向相反的第二方向从衬底取出尖端。 该方法还包括相对于彼此横向移动尖端和衬底中的至少一个。 此外，该方法还包括在基本上平行于第一方向的第三方向上的第二位置处将尖端插入基板，从而使基板的第二部分与尖端移位，并且将尖端从基板中取出 第四方向与第三方向基本相反。
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公开(公告)号：US20090070979A1
公开(公告)日：2009-03-19
申请号：US11898837
申请日：2007-09-17
申请人： Bernabe J. Arruza , Ronald Bozak , Kenneth Gilbert Roessler , Andrew Dinsdale , Tod Evan Robinson , David Brinkley
发明人： Bernabe J. Arruza , Ronald Bozak , Kenneth Gilbert Roessler , Andrew Dinsdale , Tod Evan Robinson , David Brinkley
CPC分类号： B81C1/00634 , B81C2201/0146 , Y10T29/49778
摘要： A method of nanomachining is provided. The method includes plunging a nanometer-scaled tip into a surface of a substrate at a first location in a first direction that is substantially perpendicular to the surface, thereby displacing a first portion of the substrate with the tip. The method also includes withdrawing the tip from the substrate in a second direction that is substantially opposite to the first direction. The method further includes moving at least one of the tip and the substrate laterally relative to each other. In addition, the method also includes plunging the tip into the substrate at a second location in a third direction that is substantially parallel to the first direction, thereby displacing a second portion of the substrate with the tip and withdrawing the tip from the substrate in a fourth direction that is substantially opposite to the third direction.
摘要翻译： 提供了一种纳米加工的方法。 该方法包括在基本上垂直于表面的第一方向上的第一位置处将纳米级尖端突入基片的表面，从而使基片的第一部分与尖端移位。 该方法还包括在基本上与第一方向相反的第二方向从衬底取出尖端。 该方法还包括相对于彼此横向移动尖端和衬底中的至少一个。 此外，该方法还包括在基本上平行于第一方向的第三方向上的第二位置处将尖端插入基板，从而使基板的第二部分与尖端移位，并且将尖端从基板中取出 第四方向与第三方向基本相反。
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公开(公告)号：US20090071506A1
公开(公告)日：2009-03-19
申请号：US11898836
申请日：2007-09-17
IPC分类号： C25F1/00
CPC分类号： G03F7/70925 , B03C7/006 , B08B1/00 , B08B7/0028 , G03F1/72 , G03F1/82
摘要： A method of debris removal is provided. The method includes positioning a nanometer-scaled tip adjacent to a piece of debris on a substrate. The method also includes adhering the piece of debris to the tip. In addition, the method also includes removing the piece of debris from the substrate by moving the tip away from the substrate.
摘要翻译： 提供了一种清除碎屑的方法。 该方法包括将邻近碎片的纳米级尖端定位在基底上。 该方法还包括将碎片粘附到尖端。 此外，该方法还包括通过将尖端远离基底从基片上去除碎片。
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公开(公告)号：US08287653B2
公开(公告)日：2012-10-16
申请号：US11898836
申请日：2007-09-17
CPC分类号： G03F7/70925 , B03C7/006 , B08B1/00 , B08B7/0028 , G03F1/72 , G03F1/82
摘要： A method of debris removal is provided. The method includes positioning a nanometer-scaled tip adjacent to a piece of debris on a substrate. The method also includes adhering the piece of debris to the tip. In addition, the method also includes removing the piece of debris from the substrate by moving the tip away from the substrate.
摘要翻译： 提供了一种清除碎屑的方法。 该方法包括将邻近碎片的纳米级尖端定位在基底上。 该方法还包括将碎片粘附到尖端。 此外，该方法还包括通过将尖端远离基底从基片上去除碎片。
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5.发明授权System and a method for improved crosshatch nanomachining of small high aspect three dimensional structures by creating alternating superficial surface channels 有权系统和通过创建交替表面表面通道来改进小高深三维结构的交叉线纳米加工的方法公开(公告)号：US08003283B2
公开(公告)日：2011-08-23
申请号：US12487227
申请日：2009-06-18
申请人： Tod Evan Robinson
发明人： Tod Evan Robinson
CPC分类号： G03F7/0002 , G01Q80/00 , Y10T83/05
摘要： This invention provides the user the ability to accurately nanomachine surfaces with reduced tip induced errors. Nanomaching has two types of errors, a first type of error is brought about by the tip's shape and its aspect ratio. A second type of error due to the tip's deflection as it works the material. Therefore, embodiments of the present invention minimizes tip deflection errors allowing allow high aspect Nano-bits to reliably and accurately nanomachine small high aspect three dimensional structures to repair and rejuvenate photomasks.
摘要翻译： 本发明为用户提供了精确的具有减小的尖端引起的误差的纳米机械表面的能力。 Nanomaching有两种类型的错误，第一种类型的错误是由尖端的形状和长宽比引起的。 第二种类型的错误，因为在工作材料时尖端的偏转。 因此，本发明的实施例使尖端偏转误差最小化，允许高方位纳米钻头可靠且精确地纳米机械小高边三维结构来修复和恢复光掩模。
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公开(公告)号：US08334084B2
公开(公告)日：2012-12-18
申请号：US13213532
申请日：2011-08-19
申请人： Tod Evan Robinson
发明人： Tod Evan Robinson
IPC分类号： G03F1/74
CPC分类号： G03F7/0002 , G01Q80/00 , Y10T83/05
摘要： A method for fabricating high aspect ratio nanostructures is provided. The method uses a nanomachining tip of an atomic force microscope to create an orthogonal series of isolated cuts that define a grid of high aspect ratio nanostructures in a work area on a substrate. Additional material can then be removed to smooth out at least one of the nanostructures in the work area.
摘要翻译： 提供了制造高纵横比纳米结构的方法。 该方法使用原子力显微镜的纳米加工尖端产生在衬底上的工作区域中限定高纵横比纳米结构网格的分离切割的正交系列。 然后可以除去附加材料以使工作区域中的至少一个纳米结构平滑。
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公开(公告)号：US20110303062A1
公开(公告)日：2011-12-15
申请号：US13213532
申请日：2011-08-19
申请人： Tod Evan Robinson
发明人： Tod Evan Robinson
IPC分类号： B26D7/00
CPC分类号： G03F7/0002 , G01Q80/00 , Y10T83/05
摘要： A method for fabricating high aspect ratio nanostructures is provided. The method uses a nanomachining tip of an atomic force microscope to create an orthogonal series of isolated cuts that define a grid of high aspect ratio nanostructures in a work area on a substrate. Additional material can then be removed to smooth out at least one of the nanostructures in the work area.
摘要翻译： 提供了制造高纵横比纳米结构的方法。 该方法使用原子力显微镜的纳米加工尖端产生在衬底上的工作区域中限定高纵横比纳米结构网格的分离切割的正交系列。 然后可以除去附加材料以使工作区域中的至少一个纳米结构平滑。
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