公开(公告)号：US07605395B2

公开(公告)日：2009-10-20

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070018161A1

公开(公告)日：2007-01-25

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070114525A1

公开(公告)日：2007-05-24

申请号：US11604076

申请日：2006-11-22

申请人： Yong-uk Lee ,  Mun-pyo Hong ,  Bo-sung Kim ,  Joon-hak Oh ,  Soo-jin Kim

发明人： Yong-uk Lee ,  Mun-pyo Hong ,  Bo-sung Kim ,  Joon-hak Oh ,  Soo-jin Kim

IPC分类号： H01L51/00

CPC分类号： H01L51/0005 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/0545

摘要： Embodiments of a display device comprises an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated from one another to define a channel region; a wall having one or more openings to expose the channel region, at least a portion of the source electrode, and at least a portion of the drain electrode; and an organic semiconductor layer formed in the one or more openings, the one or more openings comprising a channel part exposing the channel region and an ink guide part extending outward from the channel part. The ink-jet printing process for the display device has an improved processing margin.

摘要翻译： 显示装置的实施例包括绝缘基板; 源电极和漏极，并且彼此分离以限定沟道区; 具有一个或多个开口以暴露沟道区域的壁，源电极的至少一部分以及漏电极的至少一部分; 以及形成在所述一个或多个开口中的有机半导体层，所述一个或多个开口包括暴露所述沟道区的沟道部分和从所述沟道部向外延伸的引导部。 用于显示装置的喷墨打印处理具有改进的处理余量。

公开(公告)号：US07808044B2

公开(公告)日：2010-10-05

申请号：US11495911

申请日：2006-07-27

申请人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

发明人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

IPC分类号： H01L27/12

CPC分类号： H01L51/0541 ,  H01L51/0005 ,  H01L51/0097 ,  H01L51/0545

摘要： The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

摘要翻译： 本发明涉及一种薄膜晶体管基板，包括：绝缘基板; 源电极和漏电极，其形成在绝缘基板上并且彼此分离并且在其间具有沟道区域; 分别暴露出源电极和漏电极的至少部分，其包围沟道区域，并由含氟聚合物形成; 和形成在壁内的有机半导体层。 因此，本发明提供了有机半导体层被平坦化的TFT基板。 此外，本发明还提供一种使有机半导体层平坦化的TFT基板的制造方法。

公开(公告)号：US20100006832A1

公开(公告)日：2010-01-14

申请号：US12561218

申请日：2009-09-16

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung kim ,  Yong-uk Lee

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US20070114524A1

公开(公告)日：2007-05-24

申请号：US11601086

申请日：2006-11-17

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US08258004B2

公开(公告)日：2012-09-04

申请号：US12561218

申请日：2009-09-16

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US07638358B2

公开(公告)日：2009-12-29

申请号：US11601086

申请日：2006-11-17

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US20070023837A1

公开(公告)日：2007-02-01

申请号：US11495911

申请日：2006-07-27

申请人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

发明人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

IPC分类号： H01L27/12

CPC分类号： H01L51/0541 ,  H01L51/0005 ,  H01L51/0097 ,  H01L51/0545

摘要： The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

摘要翻译： 本发明涉及一种薄膜晶体管基板，包括：绝缘基板; 源电极和漏电极，其形成在绝缘基板上并且彼此分离并且在其间具有沟道区域; 分别暴露出源电极和漏电极的至少部分，其包围沟道区域，并由含氟聚合物形成; 和形成在壁内的有机半导体层。 因此，本发明提供了有机半导体层被平坦化的TFT基板。 此外，本发明还提供一种使有机半导体层平坦化的TFT基板的制造方法。