公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070018161A1

公开(公告)日：2007-01-25

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07605395B2

公开(公告)日：2009-10-20

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070114525A1

公开(公告)日：2007-05-24

申请号：US11604076

申请日：2006-11-22

申请人： Yong-uk Lee ,  Mun-pyo Hong ,  Bo-sung Kim ,  Joon-hak Oh ,  Soo-jin Kim

发明人： Yong-uk Lee ,  Mun-pyo Hong ,  Bo-sung Kim ,  Joon-hak Oh ,  Soo-jin Kim

IPC分类号： H01L51/00

CPC分类号： H01L51/0005 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/0545

摘要： Embodiments of a display device comprises an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated from one another to define a channel region; a wall having one or more openings to expose the channel region, at least a portion of the source electrode, and at least a portion of the drain electrode; and an organic semiconductor layer formed in the one or more openings, the one or more openings comprising a channel part exposing the channel region and an ink guide part extending outward from the channel part. The ink-jet printing process for the display device has an improved processing margin.

摘要翻译： 显示装置的实施例包括绝缘基板; 源电极和漏极，并且彼此分离以限定沟道区; 具有一个或多个开口以暴露沟道区域的壁，源电极的至少一部分以及漏电极的至少一部分; 以及形成在所述一个或多个开口中的有机半导体层，所述一个或多个开口包括暴露所述沟道区的沟道部分和从所述沟道部向外延伸的引导部。 用于显示装置的喷墨打印处理具有改进的处理余量。

公开(公告)号：US20070166855A1

公开(公告)日：2007-07-19

申请号：US11534106

申请日：2006-09-21

申请人： Yong-uk Lee ,  Soo-jin Kim ,  Joon-hak Oh

发明人： Yong-uk Lee ,  Soo-jin Kim ,  Joon-hak Oh

IPC分类号： H01L21/00 ,  H01L29/08 ,  H01L29/04 ,  H01L33/00

CPC分类号： H01L51/0541 ,  H01L51/0005 ,  H01L51/102

摘要： A display device comprises an insulating substrate, an organic semiconductor layer formed on the insulating substrate, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are interposed between the insulating substrate and the organic semiconductor layer, and spaced away from each other to define a channel region therebetween which is biased to one side of a region in which the organic semiconductor layer is formed.

摘要翻译： 显示装置包括绝缘基板，形成在绝缘基板上的有机半导体层，源电极和漏电极，其中源电极和漏电极介于绝缘基板和有机半导体层之间，并与 彼此限定它们之间的沟道区域，其被偏压到形成有机半导体层的区域的一侧。