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公开(公告)号:US20060046434A1
公开(公告)日:2006-03-02
申请号:US10926764
申请日:2004-08-26
申请人: Boe Su , H.M. Yu , Chia-Jen Cheng , Tzu-Han Lin , Kuo-Wei Lin
发明人: Boe Su , H.M. Yu , Chia-Jen Cheng , Tzu-Han Lin , Kuo-Wei Lin
IPC分类号: H01L21/78 , H01L21/44 , H01L21/302
CPC分类号: H01L21/02076 , H01L21/78 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05568 , H01L2224/05655 , H01L2224/1147 , H01L2224/11502 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13116 , H01L2224/13147 , H01L2224/13155 , H01L2924/00013 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/0105 , H01L2224/13099
摘要: A method for preventing lead precipitation during wafer processing is disclosed. The method includes singulating a semiconductor wafer having a plurality of solder bumps and applying cold deionized (DI) water to the semiconductor wafer during singulation. Application of the cold DI water reduces or prevents lead precipitation during the singulation process, and thereby reduces the presence of bump oxidation.
摘要翻译: 公开了一种在晶片加工过程中防止铅析出的方法。 该方法包括在分割期间单片化具有多个焊料凸块的半导体晶片并将冷去离子(DI)水施加到半导体晶片。 冷去离子水的应用减少或防止在分离过程中的铅沉淀,从而减少凸起氧化的存在。