公开(公告)号：US08088232B2

公开(公告)日：2012-01-03

申请号：US11574469

申请日：2005-08-29

申请人： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  Davd G. Schwarz

发明人： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  Davd G. Schwarz

IPC分类号： C22C27/04 ,  C25B9/00 ,  C23C14/00 ,  B22F3/24 ,  B32B9/00

CPC分类号： C22C1/045 ,  B22F3/162 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  C22C27/04 ,  C23C14/3414 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10 ,  B22F3/16 ,  B22F3/24

摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.

摘要翻译： 钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。 具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。 溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。 通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。 薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

公开(公告)号：US20080193798A1

公开(公告)日：2008-08-14

申请号：US11574469

申请日：2005-08-29

申请人： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  Davd G. Schwarz

发明人： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  Davd G. Schwarz

IPC分类号： C23C14/34 ,  B22F3/14 ,  C22C27/04

CPC分类号： C22C1/045 ,  B22F3/162 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  C22C27/04 ,  C23C14/3414 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10 ,  B22F3/16 ,  B22F3/24

摘要： Molybdenum sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.

摘要翻译： 钼溅射靶和烧结表征为没有或最小纹理条带或通过厚度梯度。 具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。 溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。 通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。 薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。