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公开(公告)号：US06403151B1
公开(公告)日：2002-06-11
申请号：US09552164
申请日：2000-04-18
IPC分类号： B05D506
CPC分类号： C23C16/52
摘要： A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.
摘要翻译： 半导体处理工具使用一种方法。 该方法包括在基底层上形成第一层，以及通过以预定比例将至少两种气体引入半导体加工工具中，在第一层之上形成无机底部抗反射涂层。 接收到指示已经维修半导体处理工具的信号，并且气体的比例响应于接收信号而变化，以控制底部抗反射涂层的光学参数，以增强随后的光刻工艺。
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2.发明授权Run-to-run control method for automated control of metal deposition processes 有权用于自动控制金属沉积工艺的运行控制方法公开(公告)号：US07324865B1
公开(公告)日：2008-01-29
申请号：US09851905
申请日：2001-05-09
CPC分类号： H01J37/3473 , C23C14/34 , C23C14/54 , H01J37/32935
摘要： A method is provided, the method comprising monitoring consumption of a sputter target to determine a deposition rate of a metal layer during metal deposition processing using the sputter target, and modeling a dependence of the deposition rate on at least one of deposition plasma power and deposition time. The method also comprises applying the deposition rate model to modify the metal deposition processing to form the metal layer to have a desired thickness.
摘要翻译： 提供了一种方法，所述方法包括：在使用溅射靶的金属沉积处理期间监测溅射靶的消耗以确定金属层的沉积速率，以及建模沉积速率对沉积等离子体功率和沉积中的至少一种的依赖性 时间。 该方法还包括施加沉积速率模型以修改金属沉积处理以形成具有期望厚度的金属层。
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3.发明授权Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization 有权用于化学机械平面化（CMP）优化的铜厚度的先进工艺控制（APC）公开(公告)号：US06630360B2
公开(公告)日：2003-10-07
申请号：US10044641
申请日：2002-01-10
IPC分类号： H01L2100
CPC分类号： H01L21/76843 , H01L21/7684 , H01L21/76873 , H01L21/76877 , H01L22/20 , H01L23/53238 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.
摘要翻译： 提供了一种方法，其包括在工件上形成铜籽晶层并测量工件上铜籽晶层的均匀性。 该方法还包括应用均匀度测量以修改处理以形成具有期望的均匀度分布的铜层，以在随后的平坦化中增加平坦化。
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公开(公告)号：US5914879A
公开(公告)日：1999-06-22
申请号：US886824
申请日：1997-03-04
IPC分类号： G06F19/00
CPC分类号： G05B19/4184 , G05B2219/45031 , Y02P90/14
摘要： A system and method for calculating the performance of a cluster tool using a weighted configuration matrix. The system includes a computer system which maintains a database of entities corresponding to semiconductor wafer processing modules in a fab. A user "clusters" the entities, i.e., selects entities to reflect the relationship of the constituent modules physically linked together which form the cluster tool. The user also designates a main module against which the main performance events of the cluster tool, such as begin run and end run, are logged in the database. The computer system configures all of the "up" and "down" state configuration combinations of the cluster tool modules and displays the configurations for the user. The user specifies a weight for each of the configurations based upon an estimate of the performance the cluster tool while in the respective configuration relative to the performance of the cluster tool in a fully operable configuration. For example, the user may choose the weights based upon the throughput of wafers capable of being processed by the cluster tool in each of the respective configurations, the number of wafer processes capable of being performed by the cluster tool in each of the respective configurations, or the economic value added (EVA) by the wafer processes capable of being performed by the cluster tool in each of the respective configurations. The computer system compiles the configurations and received weights into a weighted configuration matrix which is used to calculate the performance of the cluster tool. In particular, the E10 metrics and OEE metric components are calculated as a measure of the reliability, availability, maintainability, operational efficiency and utilization aspects of performance of the cluster tool over a total period of time. Formulas for calculating various of the metrics using the configuration matrix are provided. The method is applicable to both sequential and parallel type cluster tools and does not require additional data tracking beyond currently tracked data.
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公开(公告)号：US06500681B1
公开(公告)日：2002-12-31
申请号：US10044642
申请日：2002-01-11
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , H01L22/26
摘要： Disclosed herein is a method comprised of forming a metal layer above a structure layer on a workpiece, measuring a thickness of the metal layer, determining, based upon the measured thickness of the metal layer, at least one parameter of an etching process to be performed on the metal layer, and performing the etching process comprised of the determined parameter on the metal layer. Also disclosed is a system comprised of a deposition tool for forming a metal layer above a structure layer on a workpiece, a metrology tool for measuring a thickness of the metal layer, a controller for determining, based upon the measured thickness of the metal layer, at least one parameter of an etch process to be performed on the metal layer, and an etch tool adapted to perform an etch process comprised of the determined parameter on the metal layer.
摘要翻译： 本文公开了一种方法，包括在工件上的结构层上形成金属层，测量金属层的厚度，基于所测量的金属层的厚度，确定要执行的蚀刻工艺的至少一个参数 并且在金属层上执行由确定的参数构成的蚀刻工艺。 还公开了一种系统，包括用于在工件上形成结构层上方的金属层的沉积工具，用于测量金属层的厚度的计量工具，用于基于所测量的金属层厚度确定的控制器， 要在金属层上执行的蚀刻工艺的至少一个参数，以及适于在金属层上执行由确定的参数构成的蚀刻工艺的蚀刻工具。
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