公开(公告)号：US11574805B2

公开(公告)日：2023-02-07

申请号：US16865159

申请日：2020-05-01

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Reuben Chacko

IPC: H01L21/02 ,  C08F220/68 ,  H01L23/31 ,  H01L23/29 ,  C09D133/16

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

公开(公告)号：US20220181140A1

公开(公告)日：2022-06-09

申请号：US17682175

申请日：2022-02-28

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Reuben Chacko

IPC: H01L21/02 ,  C08F220/68 ,  H01L23/31 ,  H01L23/29 ,  C09D133/16

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

公开(公告)号：US12057308B2

公开(公告)日：2024-08-06

申请号：US17682175

申请日：2022-02-28

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Reuben Chacko

IPC: H01L21/02 ,  C08F220/68 ,  C09D133/16 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L21/0212 ,  C08F220/68 ,  C09D133/16 ,  H01L21/02282 ,  H01L23/293 ,  H01L23/3171

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

公开(公告)号：US20210082683A1

公开(公告)日：2021-03-18

申请号：US16865159

申请日：2020-05-01

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Reuben Chacko

IPC: H01L21/02 ,  C08F220/68 ,  C09D133/16 ,  H01L23/29 ,  H01L23/31

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.