Selective liquiphobic surface modification of substrates

    公开(公告)号:US11574805B2

    公开(公告)日:2023-02-07

    申请号:US16865159

    申请日:2020-05-01

    Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

    SELECTIVE LIQUIPHOBIC SURFACE MODIFICATION OF SUBSTRATES

    公开(公告)号:US20220181140A1

    公开(公告)日:2022-06-09

    申请号:US17682175

    申请日:2022-02-28

    Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

    METHODS FOR GLOBAL PLANARIZATION
    5.
    发明申请

    公开(公告)号:US20250096005A1

    公开(公告)日:2025-03-20

    申请号:US18890144

    申请日:2024-09-19

    Abstract: Compositions and methods for global planarization of microelectronic substrates are provided. The methods include applying a crosslinking modifier composition to the surface of a substrate, or to any intermediate layer(s) on the substrate surface. A planarizing material can then be applied to the crosslinking modifier layer, which influences the degree of crosslinking in the planarizing layer. Depending on the specific topography of the underlying substrate (or intermediate layer), different amounts of planarizing material are removed during a subsequent develop back step, thereby eliminating bias that usually exists between regions of varying topographic density. The result is an effective global planarization method that is both time and cost efficient.

    SELECTIVE LIQUIPHOBIC SURFACE MODIFICATION OF SUBSTRATES

    公开(公告)号:US20210082683A1

    公开(公告)日:2021-03-18

    申请号:US16865159

    申请日:2020-05-01

    Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

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