利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.027 秒)

    Techniques to Enhance Selectivity of Electrical Breakdown of Carbon Nanotubes
    3.
    发明申请
    Techniques to Enhance Selectivity of Electrical Breakdown of Carbon Nanotubes 审中-公开
    提高碳纳米管电击穿选择性的技术

    公开(公告)号：US20110136304A1

    公开(公告)日：2011-06-09

    申请号：US12814254

    申请日：2010-06-11

    申请人： Eric W. Wong ,  Brian D. Hunt ,  Rajay Kumar ,  Chao Li

    发明人： Eric W. Wong ,  Brian D. Hunt ,  Rajay Kumar ,  Chao Li

    IPC分类号： H01L21/338 ,  B82Y40/00

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

    摘要： Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.

    摘要翻译： 技术用于制造碳纳米管器件。 这些技术改进了不需要的纳米管的选择性去除，例如金属碳纳米管，同时留下了期望的纳米管，如半导体碳纳米管。 在第一种技术中，狭缝图案化用于切割或断裂碳纳米管具有比期望更长的长度。 通过改变开槽的宽度和间距，可以去除纳米管的一定长度或更大。 一旦纳米管的长度被限制在一定或预期的范围内，去除纳米管的电击穿方法更有效。 在第二种技术中，在一个电极（例如漏极或源极）处产生肖特基势垒。 这种肖特基势垒有助于防止在使用电击穿方法时无意中去除所需的纳米管。 第一和第二技术可以单独使用或者彼此组合使用。

    Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
    4.
    发明授权
    Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same 有权
    用于存储器，RF通信和感测应用的碳纳米管开关及其制造方法

    公开(公告)号：US07446044B2

    公开(公告)日：2008-11-04

    申请号：US11523273

    申请日：2006-09-19

    申请人： Anupama B. Kaul ,  Eric W. Wong ,  Richard L. Baron ,  Larry Epp

    发明人： Anupama B. Kaul ,  Eric W. Wong ,  Richard L. Baron ,  Larry Epp

    IPC分类号： B81B7/02 ,  H01L21/44

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/56 ,  G11C23/00 ,  H01H1/0094 ,  H01H59/0009 ,  Y10S438/903 ,  Y10S977/876 ,  Y10S977/938

    摘要： Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive substrate, such as a heavily doped silicon wafer or an SOI wafer. The carbon nanotube is electrically connected at one location to a terminal. At another location of the carbon nanotube there is situated a pull electrode that can be used to elecrostatically displace the carbon nanotube so that it selectively makes contact with either the pull electrode or with a contact electrode. Connection to the pull electrode is sufficient to operate the device as a simple switch, while connection to a contact electrode is useful to operate the device in a manner analogous to a relay. In various embodiments, the devices disclosed are useful as at least switches for various signals, multi-state memory, computational devices, and multiplexers.

    摘要翻译： 具有原位生长的碳纳米管作为其元件的开关，以及制造这种开关的方法。 碳纳米管与诸如重掺杂硅晶片或SOI晶片的导电基板机械连接地原位生长。 碳纳米管在一个位置电连接到端子。 在碳纳米管的另一位置处设置有可用于使碳纳米管静电置换的拉电极，使其选择性地与拉电极或接触电极接触。 与拉电极的连接足以将器件操作为简单的开关，而与接触电极的连接对于以与继电器类似的方式操作器件是有用的。 在各种实施例中，所公开的设备至少用于各种信号，多状态存储器，计算设备和多路复用器的开关。

    CARBON NANOTUBE SWITCHES FOR MEMORY, RF COMMUNICATIONS AND SENSING APPLICATIONS, AND METHODS OF MAKING THE SAME
    5.
    发明申请
    CARBON NANOTUBE SWITCHES FOR MEMORY, RF COMMUNICATIONS AND SENSING APPLICATIONS, AND METHODS OF MAKING THE SAME 有权
    用于存储器，RF通信和感测应用的碳纳米管开关及其制造方法

    公开(公告)号：US20080233744A1

    公开(公告)日：2008-09-25

    申请号：US11523273

    申请日：2006-09-19

    申请人： Anupama B. Kaul ,  Eric W. Wong ,  Richard L. Baron ,  Larry Epp

    发明人： Anupama B. Kaul ,  Eric W. Wong ,  Richard L. Baron ,  Larry Epp

    IPC分类号： H01L21/44

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/56 ,  G11C23/00 ,  H01H1/0094 ,  H01H59/0009 ,  Y10S438/903 ,  Y10S977/876 ,  Y10S977/938

    摘要： Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive substrate, such as a heavily doped silicon wafer or an SOI wafer. The carbon nanotube is electrically connected at one location to a terminal. At another location of the carbon nanotube there is situated a pull electrode that can be used to electrostatically displace the carbon nanotube so that it selectively makes contact with either the pull electrode or with a contact electrode. Connection to the pull electrode is sufficient to operate the device as a simple switch, while connection to a contact electrode is useful to operate the device in a manner analogous to a relay. In various embodiments, the devices disclosed are useful as at least switches for various signals, multi-state memory, computational devices, and multiplexers.

    摘要翻译： 具有原位生长的碳纳米管作为其元件的开关，以及制造这种开关的方法。 碳纳米管与诸如重掺杂硅晶片或SOI晶片的导电基板机械连接地原位生长。 碳纳米管在一个位置电连接到端子。 在碳纳米管的另一位置处设置有可以用于静电置换碳纳米管的拉电极，使得其选择性地与拉电极或接触电极接触。 与拉电极的连接足以将器件操作为简单的开关，而与接触电极的连接对于以类似于继电器的方式操作器件是有用的。 在各种实施例中，所公开的设备至少用于各种信号，多状态存储器，计算设备和多路复用器的开关。

    Microfluidic device, and related methods
    6.
    发明授权
    Microfluidic device, and related methods 失效
    微流控器件及相关方法

    公开(公告)号：US07850861B1

    公开(公告)日：2010-12-14

    申请号：US11764359

    申请日：2007-06-18

    申请人： Eric W. Wong

    发明人： Eric W. Wong

    IPC分类号： C23F1/00

    CPC分类号： B01J19/0093 ,  B01J2219/00788 ,  B01J2219/00826 ,  B01J2219/00828 ,  B01J2219/00831 ,  B01J2219/00833 ,  B01J2219/00837 ,  B01J2219/0086 ,  B01L3/5023 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/069 ,  Y10T137/0391 ,  Y10T137/0402

    摘要： A method of making a microfluidic device is provided. The method features patterning a permeable wall on a substrate, and surrounding the permeable wall with a solid, non-permeable boundary structure to establish a microfluidic channel having a cross-sectional dimension less than 5,000 microns and a cross-sectional area at least partially filled with the permeable wall so that fluid flowing through the microfluidic channel at least partially passes through the permeable wall.

    摘要翻译： 提供了制造微流体装置的方法。 该方法特征在于在基底上图案化可渗透的壁，并且用固体，不可渗透的边界结构围绕可渗透壁，以建立具有小于5,000微米的横截面尺寸的微流体通道，并且横截面积至少部分地填充 具有可渗透壁，使得流过微流体通道的流体至少部分地通过可渗透壁。