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    Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
    4.
    发明申请
    Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
    通过机械方式回收利用包括多层结构在内的薄片的薄片

    公开(公告)号：US20050189323A1

    公开(公告)日：2005-09-01

    申请号：US11075272

    申请日：2005-03-07

    申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

    发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

    IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/762

    CPC分类号： H01L21/02032 ,  H01L21/76254

    摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.

    摘要翻译： 本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。 施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。 该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。 通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。

    Methods for transferring a thin layer from a wafer having a buffer layer
    6.
    发明申请
    Methods for transferring a thin layer from a wafer having a buffer layer 有权
    从具有缓冲层的晶片转移薄层的方法

    公开(公告)号：US20050191825A1

    公开(公告)日：2005-09-01

    申请号：US11032844

    申请日：2005-01-10

    申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Nicolas Daval

    发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Nicolas Daval

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12 ,  H01L21/00 ,  C30B1/00 ,  H01L21/30 ,  H01L21/36 ,  H01L21/46 ,  H01L21/84

    CPC分类号： H01L21/76259 ,  H01L21/76254

    摘要： A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.

    摘要翻译： 描述了从晶片转移半导体材料层的方法。 晶片包括支撑基板和包括具有第一晶格参数的材料的缓冲层的上表面。 在一个实施例中，该技术包括在缓冲层上生长应变层。 应变层由具有与第一晶格参数基本不同的标称晶格参数的半导体材料制成，并且其生长到足够薄的厚度以避免其中的应变松弛。 该方法还包括在应变层上生长松弛层。 松弛层由硅制成，并且具有至少一种其它半导体材料的浓度，其具有基本上与第一晶格参数相同的标称晶格参数。 该技术还包括在缓冲层中提供弱化区域，并提供能量以在弱化区域分离结构。 该结构包括缓冲层的一部分，应变层和松弛层。 最后; 该方法包括在结构的松弛层中富集至少一种其它半导体材料的浓度。