公开(公告)号：US09449816B2

公开(公告)日：2016-09-20

申请号：US14095454

申请日：2013-12-03

Applicant: California Institute of Technology

Inventor： Adrianus Indrat Aria ,  Morteza Gharib ,  Adi Wijaya Gani

IPC: H01L51/40 ,  H01L29/08 ,  H01L21/02 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01L29/24 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/043 ,  C01B31/0453 ,  C01B31/0484 ,  C01B32/186 ,  C01B32/194 ,  C01B32/23 ,  H01L21/02527 ,  H01L21/02614 ,  Y10S977/734 ,  Y10S977/843 ,  Y10S977/847 ,  Y10S977/932

Abstract: A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.

公开(公告)号：US20170053988A1

公开(公告)日：2017-02-23

申请号：US15254296

申请日：2016-09-01

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Adrianus Indrat Aria ,  Morteza Gharib ,  Adi Wijaya Gani

IPC: H01L29/24 ,  C01B31/04

CPC classification number: H01L29/24 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/194 ,  C01B32/23 ,  H01L21/02527 ,  H01L21/02614 ,  Y10S977/734 ,  Y10S977/843 ,  Y10S977/847 ,  Y10S977/932

Abstract: A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.

Abstract translation: 提供了一种制造石墨烯氧化物材料的方法，其中氧化被限制在石墨烯层内并且具有期望的带隙。 该方法允许开发特定的带隙值。 另外，掩模的使用与该方法一致，因此可以实现复杂的配置。 所得到的氧化石墨烯材料因此是完全可定制的，并且可以适应于大量有用的工程应用。

公开(公告)号：US20140094021A1

公开(公告)日：2014-04-03

申请号：US14095454

申请日：2013-12-03

Applicant: California Institute of Technology

Inventor： Morteza Gharib ,  Adrianus Indrat Aria ,  Adi Wijaya Gani

IPC: H01L21/02

CPC classification number: H01L29/24 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/043 ,  C01B31/0453 ,  C01B31/0484 ,  C01B32/186 ,  C01B32/194 ,  C01B32/23 ,  H01L21/02527 ,  H01L21/02614 ,  Y10S977/734 ,  Y10S977/843 ,  Y10S977/847 ,  Y10S977/932

Abstract: A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.

Abstract translation: 提供了一种制造石墨烯氧化物材料的方法，其中氧化被限制在石墨烯层内并且具有期望的带隙。 该方法允许开发特定的带隙值。 另外，掩模的使用与该方法一致，因此可以实现复杂的配置。 所得到的氧化石墨烯材料因此是完全可定制的，并且可以适应于大量有用的工程应用。