公开(公告)号：US20210057601A1

公开(公告)日：2021-02-25

申请号：US16964706

申请日：2019-01-25

Applicant: CAMBRIDGE ENTERPRISE LTD

Inventor： Rachel A. OLIVER ,  Tongtong ZHU ,  Yingjun LIU ,  Peter GRIFFIN

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.