公开(公告)号：US20200227255A1

公开(公告)日：2020-07-16

申请号：US16651055

申请日：2017-09-27

Applicant: CAMBRIDGE ENTERPRISE LTD

Inventor： Tongtong ZHU ,  Rachel A. OLIVER ,  Yingjun LIU

IPC: H01L21/02 ,  H01L33/00 ,  C25F3/12

Abstract: A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm−3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm−3 and 1×1017 cm−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

公开(公告)号：US20230096352A1

公开(公告)日：2023-03-30

申请号：US18060317

申请日：2022-11-30

Applicant: CAMBRIDGE ENTERPRISE LTD

Inventor： Tongtong ZHU ,  Rachel A. OLIVER ,  Yingjun LIU

IPC: H01L21/02 ,  C25F3/12 ,  H01L33/00

Abstract: A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×1017 cm−3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×1014 cm−3 and 1×1017 cm−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

公开(公告)号：US20210057601A1

公开(公告)日：2021-02-25

申请号：US16964706

申请日：2019-01-25

Applicant: CAMBRIDGE ENTERPRISE LTD

Inventor： Rachel A. OLIVER ,  Tongtong ZHU ,  Yingjun LIU ,  Peter GRIFFIN

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.