-
公开(公告)号：US11651954B2
公开(公告)日：2023-05-16
申请号：US16651055
申请日：2017-09-27
发明人： Tongtong Zhu , Rachel A. Oliver , Yingjun Liu
IPC分类号： H01L21/3205 , H01L33/00 , H01L21/02 , C25F3/12
CPC分类号： H01L21/02203 , C25F3/12 , H01L33/007
摘要： A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm−3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm−3 and 1×1017 cm−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.
-
公开(公告)号：US20230096352A1
公开(公告)日：2023-03-30
申请号：US18060317
申请日：2022-11-30
发明人： Tongtong ZHU , Rachel A. OLIVER , Yingjun LIU
摘要： A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×1017 cm−3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×1014 cm−3 and 1×1017 cm−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.
-
公开(公告)号：US20210057601A1
公开(公告)日：2021-02-25
申请号：US16964706
申请日：2019-01-25
发明人： Rachel A. OLIVER , Tongtong ZHU , Yingjun LIU , Peter GRIFFIN
摘要： A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.
-
4.发明申请COMPOUNDS AS MODULATOR OF JAK-STAT PATHWAY, METHODS AND APPLICATIONS THEREOF 有权作为JAK-STAT路径的调节剂的化合物，其方法和应用公开(公告)号：US20160214968A1
公开(公告)日：2016-07-28
申请号：US15004114
申请日：2016-01-22
申请人： UNIVERSITY OF MYSORE , NATIONAL UNIVERSITY OF SINGAPORE , BANGALORE UNIVERSITY , CAMBRIDGE ENTERPRISE LTD
发明人： Kanchugarakoppal Subbegowda RANGAPPA , BASAPPA , Chakrabhavi Dhananjaya MOHAN , Shobith RANGAPPA , Hanumantharayappa BHARATHKUMAR , Gautam SETHI , Andreas BENDER , Peter Edward LOBIE , Kam Man HUI , Alan Prem KUMAR , Vijay Kumar PANDEY , Julian FUCHS , Muthu Kumaraswamy SHANMUGAM , Krishna BULUSU , Xiaoyun DAI , Feng LI , Amudha DEIVASIGAMANI
IPC分类号： C07D413/04 , C07D265/16
CPC分类号： C07D413/04 , C07D265/16
摘要： The present disclosure relates to compound of structural Formula I and a method for preparing said compounds. The disclosure further relates to a method of employing the Formula I compounds for modulation of Janus kinase-Signal Transducer and Activator of Transcription (JAK-STAT) pathway in cancer cells, and the corresponding use of compound of Formula I as anti-cancer agents.
摘要翻译： 本公开涉及结构式I的化合物和制备所述化合物的方法。 本公开还涉及使用式I化合物调节癌细胞中Janus激酶 - 信号转导和转录激活因子（JAK-STAT）途径的方法，以及式I化合物作为抗癌剂的相应应用。
-
公开(公告)号：US11631782B2
公开(公告)日：2023-04-18
申请号：US16964706
申请日：2019-01-25
发明人： Rachel A. Oliver , Tongtong Zhu , Yingjun Liu , Peter Griffin
摘要： A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm−3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.
-
公开(公告)号：US20230080289A1
公开(公告)日：2023-03-16
申请号：US17682027
申请日：2022-02-28
发明人： Frederic BROSSARD , Ljiljana FRUK
摘要： A sensor for use in biosensing is disclosed. The sensor comprises a photonic crystal waveguide comprising a photonic crystal comprising holes in a layer of dielectric material and a waveguide in the photonic crystal. The sensor comprises at least one strip disposed on the photonic crystal waveguide, spaced apart along, and running across the photonic crystal waveguide so as to form respective strip cavities, each of the at least one strip including a respective layer of material for sensing presence of a respective analyte; and a slot running along the waveguide of the photonic crystal waveguide.
-
公开(公告)号：US20200227255A1
公开(公告)日：2020-07-16
申请号：US16651055
申请日：2017-09-27
发明人： Tongtong ZHU , Rachel A. OLIVER , Yingjun LIU
摘要： A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm−3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm−3 and 1×1017 cm−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.
-
公开(公告)号：US09604974B2
公开(公告)日：2017-03-28
申请号：US15004114
申请日：2016-01-22
申请人： UNIVERSITY OF MYSORE , NATIONAL UNIVERSITY OF SINGAPORE , BANGALORE UNIVERSITY , CAMBRIDGE ENTERPRISE LTD
发明人： Kanchugarakoppal Subbegowda Rangappa , Basappa , Chakrabhavi Dhananjaya Mohan , Shobith Rangappa , Hanumantharayappa Bharathkumar , Gautam Sethi , Andreas Bender , Peter Edward Lobie , Kam Man Hui , Alan Prem Kumar , Vijay Kumar Pandey , Julian Fuchs , Muthu Kumaraswamy Shanmugam , Krishna Bulusu , Xiaoyun Dai , Feng Li , Amudha Deivasigamani
IPC分类号： C07D413/04 , C07D265/16
CPC分类号： C07D413/04 , C07D265/16
摘要： The present disclosure relates to compound of structural Formula I and a method for preparing said compounds. The disclosure further relates to a method of employing the Formula I compounds for modulation of Janus kinase-Signal Transducer and Activator of Transcription (JAK-STAT) pathway in cancer cells, and the corresponding use of compound of Formula I as anti-cancer agents.
-
公开(公告)号：US20230232919A1
公开(公告)日：2023-07-27
申请号：US18076453
申请日：2022-12-07
发明人： Zhenyu ZHANG , Peter Robert FRYER , Shaojun QI , Ioannis KIRATZIS , Stuart CLARKE , David SKUSE
CPC分类号： A41D13/1192 , C09D7/63 , C09D7/61 , C09D7/20 , C09D101/08 , C08L1/08 , C08L2201/10 , C08L2203/02 , C08L2203/16
摘要： Articles comprising a surface or porous substrate and having on said surface or porous substrate a coating comprising microfibrillated cellulose or nanocellulose, methods of applying a coating comprising microfibrillated cellulose or nanocellulose to a surface or porous substrate, compositions comprising microfibrillated cellulose or nanocellulose, and the use of such compositions in methods of preparing an antimicrobial surface coating, and improving filtration efficiency and preparing an antimicrobial surface and/or antiviral surface coating.
-
公开(公告)号：US10903396B1
公开(公告)日：2021-01-26
申请号：US16545615
申请日：2019-08-20
发明人： Michael Engel , Mathias B. Steiner , Andrea C. Ferrari , Antonio Lombardo , Matteo Barbone , Mete Atature , Carmen Palacios Berraquero , Dhiren Manji Kara , Ilya Goykhman
摘要： A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.017 秒)
