公开(公告)号：US11575822B2

公开(公告)日：2023-02-07

申请号：US17506127

申请日：2021-10-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto

IPC: H04N5/232 ,  H01L27/146 ,  H04N5/369

Abstract: A substrate including a first surface and a second surface, a first region of a first conductivity type disposed at a first depth, a second region of the first conductivity type disposed at the first depth and separated from the first region, a third region of the first conductivity type disposed at a second depth shallower than the first depth, a first gate, a second gate, a third gate, and a microlens disposed such that transmitted light is incident on the first region, the second region, and the third region. Signal charges accumulated in the first region are read out through the third region and an impurity concentration of each of the first region and the second region is lower than an impurity concentration of the third region.

公开(公告)号：US20200312893A1

公开(公告)日：2020-10-01

申请号：US16828611

申请日：2020-03-24

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto ,  Ginjiro Toyoguchi

IPC: H01L27/146 ,  G06T7/55 ,  H04N5/232

Abstract: A photoelectric conversion apparatus in one aspect of the present disclosure includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of a second conductivity type in which a distance from a first surface being greater than a distance from the substrate to the third semiconductor region, a first isolation portion disposed between the first semiconductor region and the second semiconductor region, a microlens commonly disposed in the first semiconductor region and the second semiconductor region, and a fifth semiconductor region of the second conductivity type disposed between the first isolation portion and the fourth semiconductor region. The third semiconductor region is disposed between the fourth semiconductor region and the fifth semiconductor region.

公开(公告)号：US20230154943A1

公开(公告)日：2023-05-18

申请号：US18047382

申请日：2022-10-18

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto

IPC: H01L27/146

CPC classification number: H01L27/14603

Abstract: A photoelectric conversion device includes a substrate, a photoelectric conversion unit configured to generate charges corresponding to incident light, a floating diffusion portion to which the charges generated by the photoelectric conversion unit are transferred, and a transistor arranged in the substrate, the transistor having a plurality of main electrodes and a gate connected to the floating diffusion portion, the transistor being configured to output a signal corresponding to a potential of the floating diffusion portion from at least one of the plurality of main electrodes. In a plan view with respect to the substrate, the gate has four or more sides. In the plan view, the plurality of main electrodes is adjacent to three or more sides of the gate.

公开(公告)号：US20220132044A1

公开(公告)日：2022-04-28

申请号：US17506127

申请日：2021-10-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto

IPC: H04N5/232 ,  H04N5/369 ,  H01L27/146

Abstract: A substrate including a first surface and a second surface, a first region of a first conductivity type disposed at a first depth, a second region of the first conductivity type disposed at the first depth and separated from the first region, a third region of the first conductivity type disposed at a second depth shallower than the first depth, a first gate, a second gate, a third gate, and a microlens disposed such that transmitted light is incident on the first region, the second region, and the third region. Signal charges accumulated in the first region are read out through the third region and an impurity concentration of each of the first region and the second region is lower than an impurity concentration of the third region.

公开(公告)号：US10818715B2

公开(公告)日：2020-10-27

申请号：US16013166

申请日：2018-06-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Junji Iwata ,  Yoichi Wada ,  Yoichiro Handa ,  Daichi Seto ,  Hideyuki Ito ,  Ginjiro Toyoguchi ,  Hajime Ikeda ,  Masahiro Kobayashi

IPC: H01L27/146 ,  H01L31/112 ,  H01L27/148 ,  H01L31/103 ,  H01L31/0352

Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

公开(公告)号：US11430827B2

公开(公告)日：2022-08-30

申请号：US16722850

申请日：2019-12-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto

IPC: H01L27/14 ,  H01L27/146

Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a photoelectric conversion portion including a first region of a first conductivity type arranged on the side of a front surface of a substrate, a floating diffusion of the first conductivity type to which charges generated in the photoelectric conversion portion are transferred, and a charge transfer portion arranged between the photoelectric conversion portion and the floating diffusion, a transfer gate electrode arranged on the charge transfer portion and a potential control electrode arranged on the photoelectric conversion portion to control a potential in the first region. The potential control electrode is arranged spaced apart from the transfer gate electrode, and a voltage set in a direction in which the potential will increase with respect to the charges is applied to the potential control electrode when charges are to be transferred.

公开(公告)号：US11094731B2

公开(公告)日：2021-08-17

申请号：US16272065

申请日：2019-02-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto ,  Junji Iwata

IPC: H01L27/146 ,  H01L31/02 ,  H01L31/18

Abstract: An image capturing device is provided. The device comprises a photodiode including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, an insulator arranged between the photodiode and the third semiconductor region and a channel stop region of the first conductivity type which covers a side and a bottom surface of the insulator. The channel stop region includes a fourth semiconductor region arranged between the insulator and the second semiconductor region and a fifth semiconductor region arranged between the insulator and the third semiconductor region. An impurity concentration in the fourth semiconductor region is higher than an impurity concentration in the fifth semiconductor region and the impurity concentration in the fifth semiconductor region is not less than an impurity concentration in the first semiconductor region.

公开(公告)号：US20200219926A1

公开(公告)日：2020-07-09

申请号：US16722850

申请日：2019-12-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto

IPC: H01L27/146

Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a photoelectric conversion portion including a first region of a first conductivity type arranged on the side of a front surface of a substrate, a floating diffusion of the first conductivity type to which charges generated in the photoelectric conversion portion are transferred, and a charge transfer portion arranged between the photoelectric conversion portion and the floating diffusion, a transfer gate electrode arranged on the charge transfer portion and a potential control electrode arranged on the photoelectric conversion portion to control a potential in the first region. The potential control electrode is arranged spaced apart from the transfer gate electrode, and a voltage set in a direction in which the potential will increase with respect to the charges is applied to the potential control electrode when charges are to be transferred.

公开(公告)号：US20190259801A1

公开(公告)日：2019-08-22

申请号：US16272065

申请日：2019-02-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Daichi Seto ,  Junji Iwata

IPC: H01L27/146

Abstract: An image capturing device is provided. The device comprises a photodiode including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, an insulator arranged between the photodiode and the third semiconductor region and a channel stop region of the first conductivity type which covers a side and a bottom surface of the insulator. The channel stop region includes a fourth semiconductor region arranged between the insulator and the second semiconductor region and a fifth semiconductor region arranged between the insulator and the third semiconductor region. An impurity concentration in the fourth semiconductor region is higher than an impurity concentration in the fifth semiconductor region and the impurity concentration in the fifth semiconductor region is not less than an impurity concentration in the first semiconductor region.

公开(公告)号：US20180374886A1

公开(公告)日：2018-12-27

申请号：US16013166

申请日：2018-06-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Junji Iwata ,  Yoichi Wada ,  Yoichiro Handa ,  Daichi Seto ,  Hideyuki Ito ,  Ginjiro Toyoguchi ,  Hajime Ikeda ,  Masahiro Kobayashi

IPC: H01L27/146 ,  H01L27/148 ,  H01L31/112

CPC classification number: H01L27/14627 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14812 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/112

Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.