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    Solid state imaging device and manufacturing method thereof
    1.
    发明授权
    Solid state imaging device and manufacturing method thereof 有权

    公开(公告)号：US10818715B2

    公开(公告)日：2020-10-27

    申请号：US16013166

    申请日：2018-06-20

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Junji Iwata ,  Yoichi Wada ,  Yoichiro Handa ,  Daichi Seto ,  Hideyuki Ito ,  Ginjiro Toyoguchi ,  Hajime Ikeda ,  Masahiro Kobayashi

    IPC: H01L27/146 ,  H01L31/112 ,  H01L27/148 ,  H01L31/103 ,  H01L31/0352

    Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

    SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 审中-公开

    公开(公告)号：US20180139402A1

    公开(公告)日：2018-05-17

    申请号：US15868873

    申请日：2018-01-11

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Yukio Araoka ,  Yoichiro Handa

    IPC: H04N5/378 ,  H01L27/146 ,  H04N5/376 ,  H04N5/3745

    CPC classification number: H04N5/378 ,  H01L27/14643 ,  H04N5/3745 ,  H04N5/376

    Abstract: A solid-state imaging device includes a plurality of pixels arranged in a matrix, wherein one pixel of the plurality of pixels is arranged in one unit pixel region of a plurality of unit pixel regions, a plurality of sub vertical output lines, each of which outputs pixel signals from the plurality of pixels in the same pixel column, and a plurality of block select circuits provided in one-to-one correspondence with the plurality of sub vertical output lines. A load capacitance connected to a main vertical output line is reduced by connecting the plurality of sub vertical output lines and the main vertical output line via the plurality of block select circuits. This makes high-speed pixel signal readout possible.

    SEMICONDUCTOR APPARATUS AND DEVICE
    4.
    发明申请
    SEMICONDUCTOR APPARATUS AND DEVICE 有权

    公开(公告)号：US20220285410A1

    公开(公告)日：2022-09-08

    申请号：US17751406

    申请日：2022-05-23

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Yoshiaki Takada ,  Hajime Ikeda ,  Keisuke Ota ,  Yoichiro Handa

    IPC: H01L27/146

    Abstract: A photoelectric conversion member included in a photodiode PD2 is disposed at the position overlapping with a section B1, a photoelectric conversion member included in a photodiode PD1 is disposed at the position overlapping with a section B2, and a photoelectric conversion member included in the photodiode PD1 is disposed at the position overlapping with a section B3. A plurality of electrodes 25 each forming a Metal-Insulator-Semiconductor (MIS) structure together with a semiconductor layer 10 is disposed on a front surface FS of the semiconductor layer 10. At least one of the plurality of electrodes 25 overlaps with at least one of eight sections B2 to B9.

    Photoelectric conversion apparatus
    5.
    发明授权
    Photoelectric conversion apparatus 有权

    公开(公告)号：US11107853B2

    公开(公告)日：2021-08-31

    申请号：US16594810

    申请日：2019-10-07

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Taro Kato ,  Yoichiro Handa ,  Hajime Ikeda

    IPC: H01L27/146

    Abstract: A photoelectric conversion apparatus includes a semiconductor substrate, first and second micro lenses, a first filter with a transmittance of infrared light, and a second filter with a transmittance of visible light. At least one photoelectric conversion portion disposed so as to overlap the first filter in a planar view and a plurality of photoelectric conversion portions disposed so as to overlap the second filter in the planar view each include a first semiconductor region and a second semiconductor region. An impurity concentration of at least a part of the second semiconductor region of the at least one photoelectric conversion portion is lower than an impurity concentration of a portion in the second semiconductor regions of the plurality of photoelectric conversion portions that is disposed at the same depth as the at least a part of the second semiconductor region.

    SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 有权
    固态成像装置和成像系统

    公开(公告)号：US20150244959A1

    公开(公告)日：2015-08-27

    申请号：US14626356

    申请日：2015-02-19

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Yukio Araoka ,  Yoichiro Handa

    IPC: H04N5/378 ,  H04N5/376

    CPC classification number: H04N5/378 ,  H01L27/14643 ,  H04N5/3745 ,  H04N5/376

    Abstract: A solid-state imaging device includes a plurality of pixels arranged in a matrix, wherein one pixel of the plurality of pixels is arranged in one unit pixel region of a plurality of unit pixel regions, a plurality of sub vertical output lines, each of which outputs pixel signals from the plurality of pixels in the same pixel column, and a plurality of block select circuits provided in one-to-one correspondence with the plurality of sub vertical output lines. A load capacitance connected to a main vertical output line is reduced by connecting the plurality of sub vertical output lines and the main vertical output line via the plurality of block select circuits. This makes high-speed pixel signal readout possible.

    Abstract translation: 固态成像装置包括以矩阵形式布置的多个像素，其中多个像素中的一个像素被布置在多个单位像素区域的一个单位像素区域中，多个子垂直输出线，其中每个 输出来自同一像素列中的多个像素的像素信号，以及与多个副垂直输出线一一对应地设置的多个块选择电路。 通过经由多个块选择电路连接多个副垂直输出线和主垂直输出线来减小连接到主垂直输出线的负载电容。 这使得高速像素信号读出成为可能。

    Solid-state imaging device and imaging system
    8.
    发明授权
    Solid-state imaging device and imaging system 有权

    公开(公告)号：US10187601B2

    公开(公告)日：2019-01-22

    申请号：US15868873

    申请日：2018-01-11

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Yukio Araoka ,  Yoichiro Handa

    IPC: H04N5/378 ,  H04N5/376 ,  H04N5/374 ,  H01L27/146 ,  H04N5/3745

    Abstract: A solid-state imaging device includes a plurality of pixels arranged in a matrix, wherein one pixel of the plurality of pixels is arranged in one unit pixel region of a plurality of unit pixel regions, a plurality of sub vertical output lines, each of which outputs pixel signals from the plurality of pixels in the same pixel column, and a plurality of block select circuits provided in one-to-one correspondence with the plurality of sub vertical output lines. A load capacitance connected to a main vertical output line is reduced by connecting the plurality of sub vertical output lines and the main vertical output line via the plurality of block select circuits. This makes high-speed pixel signal readout possible.

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