公开(公告)号：US20250063832A1

公开(公告)日：2025-02-20

申请号：US18936842

申请日：2024-11-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Nobuyuki Endo ,  Tetsuya Itano ,  Kazuo Yamazaki ,  Kyouhei Watanabe ,  Junji Iwata

IPC: H01L27/146 ,  H01L31/04

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

公开(公告)号：US20240379723A1

公开(公告)日：2024-11-14

申请号：US18670594

申请日：2024-05-21

Applicant: CANON KABUSHIKI KAISHA

Inventor： Junji Iwata

IPC: H01L27/146 ,  H01L25/04 ,  H01L31/107

Abstract: A photoelectric conversion apparatus includes a first and a second multilayer wiring layer. The first or the second multilayer wiring layer is provided with a first electrode supplied with a first voltage from an outside of the photoelectric conversion apparatus. The first electrode is not connected with a second semiconductor layer.

公开(公告)号：US20240379697A1

公开(公告)日：2024-11-14

申请号：US18782893

申请日：2024-07-24

Applicant: CANON KABUSHIKI KAISHA

Inventor： Junji Iwata

IPC: H01L27/146 ,  G01S17/08 ,  G01T1/20 ,  G06T7/55 ,  H01L29/861 ,  H01L31/107

Abstract: There are provided a light detection device and a photoelectric conversion system including the light detection device including an avalanche diode including a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth with respect to the first surface, a third semiconductor region that is disposed at a third depth deeper than the second depth with respect to the first surface and is in contact with the second semiconductor region, and first and second separation regions each extending from the first depth to the third depth. The second semiconductor region and the third semiconductor region each extend from the first separation region to the second separation region. The first semiconductor region, the second semiconductor region, and the third semiconductor region have portions overlapping one another in planar view.

公开(公告)号：US12142629B2

公开(公告)日：2024-11-12

申请号：US18513410

申请日：2023-11-17

Applicant: CANON KABUSHIKI KAISHA

Inventor： Nobuyuki Endo ,  Tetsuya Itano ,  Kazuo Yamazaki ,  Kyouhei Watanabe ,  Junji Iwata

IPC: H01L27/146 ,  H01L31/04

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

公开(公告)号：US20230343798A1

公开(公告)日：2023-10-26

申请号：US18345376

申请日：2023-06-30

Applicant: CANON KABUSHIKI KAISHA

Inventor： Fumihiro Inui ,  Junji Iwata ,  Hajime Ikeda ,  Koichi Fukuda ,  Kohei Okamoto

IPC: H01L27/146 ,  G06T7/55

CPC classification number: H01L27/14607 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  G06T7/55 ,  H01L27/1464 ,  G06T2207/30252

Abstract: Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

公开(公告)号：US20230261027A1

公开(公告)日：2023-08-17

申请号：US18302384

申请日：2023-04-18

Applicant: CANON KABUSHIKI KAISHA

Inventor： Junji Iwata

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14643 ,  H01L31/1075 ,  H01L25/043

Abstract: A photoelectric conversion apparatus includes a first and a second multilayer wiring layer. The first or the second multilayer wiring layer is provided with a first electrode supplied with a first voltage from an outside of the photoelectric conversion apparatus. The first electrode is not connected with a second semiconductor layer.

公开(公告)号：US11728441B2

公开(公告)日：2023-08-15

申请号：US17214637

申请日：2021-03-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hideki Hayashi ,  Junji Iwata ,  Keita Torii ,  Yusuke Todo

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/107

CPC classification number: H01L31/02005 ,  H01L31/107 ,  H01L31/1804

Abstract: A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer, and a structure provided between the first and second semiconductor layers. The semiconductor apparatus further includes a first electrode supported by a first insulating layer, a second electrode supported by a second insulating layer, a first wire bonded to the first electrode through a first opening provided in the first semiconductor layer, and a second wire bonded to the second electrode through a second opening provided in the first semiconductor layer, and an annular member made of a non-insulating material and provided between the first semiconductor layer and the first electrode. A distance from the second semiconductor layer to a first joint between the first electrode and the first wire is longer than a distance from the second semiconductor layer to a second joint between the second electrode and the second wire.

公开(公告)号：US20220130877A1

公开(公告)日：2022-04-28

申请号：US17509751

申请日：2021-10-25

Applicant: CANON KABUSHIKI KAISHA

Inventor： Aymantarek Abdelghafar ,  Junji Iwata ,  Kazuhiro Morimoto

IPC: H01L27/146 ,  H04N5/369

Abstract: A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.

公开(公告)号：US20210296383A1

公开(公告)日：2021-09-23

申请号：US17339231

申请日：2021-06-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Fumihiro Inui ,  Junji Iwata ,  Hajime Ikeda ,  Koichi Fukuda ,  Kohei Okamoto

IPC: H01L27/146 ,  G06T7/55

Abstract: Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

公开(公告)号：US09231010B2

公开(公告)日：2016-01-05

申请号：US14245844

申请日：2014-04-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Junji Iwata ,  Masahiro Kobayashi

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/1461

Abstract: A photoelectric conversion unit has first semiconductor regions and a second semiconductor region that is disposed between the first semiconductor regions being adjacently disposed in the unit. Impurity concentration profile in a depth direction of the first and semiconductor regions has a plurality of peaks. The impurity concentration peaks of the first semiconductor region include a first impurity concentration peak and a second impurity concentration peak being lower than the first impurity concentration peak. The impurity concentration peaks of the second semiconductor region include a third, a fourth, and a fifth impurity concentration peak. The fourth impurity concentration peak is higher than the third impurity concentration peak, and a fifth impurity concentration peak is higher than the third impurity concentration peak. The depth of the third impurity concentration peak is closer to the depth of the second impurity concentration peak than that of the first impurity concentration peak.

Abstract translation: 光电转换单元具有第一半导体区域和设置在相邻设置在该单元中的第一半导体区域之间的第二半导体区域。 在第一和半导体区域的深度方向上的杂质浓度分布具有多个峰。 第一半导体区域的杂质浓度峰值包括第一杂质浓度峰值和第二杂质浓度峰值低于第一杂质浓度峰值。 第二半导体区域的杂质浓度峰值包括第三，第四和第五杂质浓度峰。 第四杂质浓度峰值高于第三杂质浓度峰值，第五杂质浓度峰值高于第三杂质浓度峰值。 第三杂质浓度峰的深度比第一杂质浓度峰的深度更接近于第二杂质浓度峰的深度。