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1.发明授权公开(公告)号：US10755633B2
公开(公告)日：2020-08-25
申请号：US16397748
申请日：2019-04-29
发明人： Wei Tang , Lixia Shen , Haoqing Guo
IPC分类号： G09G3/3225
摘要： A compensation method of a display panel, a compensation device, a display method, a display apparatus and a storage medium. The compensation method of a display panel includes: obtaining an initial compensation parameter of each pixel of the display panel and an initial conversion range for performing a data conversion on the initial compensation parameter; optimizing the initial conversion range based on a compensation effect of a compensation parameter to obtain an optimized conversion range, where the compensation effect of the compensation parameter is obtained based on the initial conversion range; and obtaining an optimized compensation parameter of each pixel of the display panel based on the optimized conversion range.
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公开(公告)号：US10199406B2
公开(公告)日：2019-02-05
申请号：US15175700
申请日：2016-06-07
发明人： Wei Huang , Jiaqing Zhao , Linrun Feng , Wei Tang , Xiaojun Guo
摘要： An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate manufacturing method comprises: forming a source electrode and a drain electrode on a gate insulating layer; forming photoresist above the gate insulating layer and the source electrode and the drain electrode; etching the photoresist to form an opening region so as to expose the gate insulating layer between the source electrode and the drain electrode, and a part of the source electrode and a part of the drain electrode; and forming an active layer in the opening region, the active layer covering the exposed gate insulating layer, the part of the source electrode and the part of the drain electrode.
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3.发明授权公开(公告)号：US10141530B2
公开(公告)日：2018-11-27
申请号：US15110091
申请日：2015-11-05
发明人： Wei Huang , Jiaqing Zhao , Wei Tang , Linrun Feng , Xiaojun Guo
摘要： This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.
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4.发明申请公开(公告)号：US20170149003A1
公开(公告)日：2017-05-25
申请号：US15110091
申请日：2015-11-05
发明人： Wei Huang , Jiaqing Zhao , Wei Tang , Linrun Feng , Xiaojun Guo
CPC分类号： H01L51/107 , H01L51/0055 , H01L51/0541 , H01L51/0558 , H01L51/105 , H01L2251/303
摘要： This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.
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