摘要:
A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube composite material is applied on the first metal layer and the second metal layer to form a semiconductor layer. The carbon nanotube composite material includes an insulated polymer and a number of carbon nanotubes dispersed in the insulated polymer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer.
摘要:
A thin film transistor controlled by a pressure includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode, and an insulative layer. The drain electrode is spaced from the source electrode. The semiconductor layer includes a polymer composite layer and is electrically connected with the source electrode and the drain electrode. The polymer composite includes a polymer substrate and a plurality of carbon nanotubes dispersed in the polymer substrate. An elastic modulus of the polymer substrate is ranged from about 0.1 MPa to about 10 MPa. The gate electrode is electrically insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulative layer. A press sensing device using the above-mentioned thin film transistor is also provided.
摘要:
An infrared detector includes a detecting element, a first electrode, a second electrode, and a covering structure. The detecting element defines an absorbing part and a non-absorbing part. The detecting element includes a first end and a second end opposite with the first end. The first end is disposed in the absorbing part. The second end is disposed in the non-absorbing part. The first electrode is electrically connected with the first end. The second electrode is electrically connected with the second end. The covering structure covers the non-absorbing part.
摘要:
The present disclosure relates to a pressure control switch. The pressure control switch includes a bistable resistance element. The bistable resistance element includes an organic, soft, low-conductivity matrix, and a plurality of high conductivity particles dispersed in the matrix. The bistable resistance element switches from a low resistance state to a high resistance state by receiving a pressure change applied to the bistable resistance element. The present disclosure also relates to a method for using the pressure control switch and an alarm system.
摘要:
The present disclosure relates to a temperature control switch. The temperature control switch includes a bistable resistance element. The bistable resistance element includes a low-conductivity matrix; and a number of high conductivity particles dispersed in the matrix. The bistable resistance element switches from a low resistance state to a high resistance state by receiving a temperature change applied to the bistable resistance element. The present disclosure also relates to a method for using the temperature control switch and an alarm system.
摘要:
A method for making a carbon nanotube metal composite includes the following steps. A number of carbon nanotubes is dispersed in a solvent to obtain a suspension. Metal powder is added into the suspension, and then the suspension agitated. The suspension containing the metal powder is allowed to stand for a while. The solvent is reduced to obtain a mixture of the number of carbon nanotubes and the metal powder.
摘要:
A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated polymer material and a number of carbon nanotubes dispersed in the insulated polymer material.
摘要:
A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa.
摘要:
A photoelectric cell includes at least one photoelectric conversion module. The photoelectric module includes a first photoelectric conversion element and a second photoelectric conversion element. The first photoelectric conversion element is made of a first thermoelectric material having positive thermoelectric coefficient and comprises a first absorbing part and a first non-absorbing part. The second photoelectric conversion element is made of a second thermoelectric material having negative thermoelectric coefficient and comprises a second absorbing part and a second non-absorbing part. The first absorbing part is electrically connected with the second absorbing part.
摘要:
A diode includes an organic composite plate, a first electrode and a second electrode. The organic composite plate includes a first portion, a second portion and a plurality of carbon nanotubes distributed therein. The carbon nanotubes in the first portion have a first band gap and the carbon nanotubes in the second portion have a second band gap. The first band gap and the second band gap are different from each other. The first electrode is electrically connected to the first portion. The second electrode electrically is connected to the second portion.