METHOD FOR MAKING SCHOTTKY BARRIER DIODE
    1.
    发明申请
    METHOD FOR MAKING SCHOTTKY BARRIER DIODE 有权
    制造肖特基二极管二极管的方法

    公开(公告)号:US20130029459A1

    公开(公告)日:2013-01-31

    申请号:US13337235

    申请日:2011-12-26

    IPC分类号: H01L21/04 H01L21/56

    摘要: A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube composite material is applied on the first metal layer and the second metal layer to form a semiconductor layer. The carbon nanotube composite material includes an insulated polymer and a number of carbon nanotubes dispersed in the insulated polymer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer.

    摘要翻译: 制造肖特基势垒二极管的方法包括以下步骤。 提供第一金属层,第二金属层和碳纳米管复合材料。 将碳纳米管复合材料施加在第一金属层和第二金属层上以形成半导体层。 碳纳米管复合材料包括绝缘聚合物和分散在绝缘聚合物中的多个碳纳米管。 半导体层与第一金属层肖特基接触并与第二金属层欧姆接触。

    THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME 审中-公开
    薄膜晶体管和使用其的压敏传感器件

    公开(公告)号:US20130001525A1

    公开(公告)日:2013-01-03

    申请号:US13323830

    申请日:2011-12-13

    IPC分类号: H01L51/30

    摘要: A thin film transistor controlled by a pressure includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode, and an insulative layer. The drain electrode is spaced from the source electrode. The semiconductor layer includes a polymer composite layer and is electrically connected with the source electrode and the drain electrode. The polymer composite includes a polymer substrate and a plurality of carbon nanotubes dispersed in the polymer substrate. An elastic modulus of the polymer substrate is ranged from about 0.1 MPa to about 10 MPa. The gate electrode is electrically insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulative layer. A press sensing device using the above-mentioned thin film transistor is also provided.

    摘要翻译: 由压力控制的薄膜晶体管包括源电极,漏电极,半导体层,栅电极和绝缘层。 漏电极与源电极间隔开。 半导体层包括聚合物复合层,并与源电极和漏电极电连接。 聚合物复合材料包括聚合物基材和分散在聚合物基材中的多个碳纳米管。 聚合物基材的弹性模量为约0.1MPa至约10MPa。 栅电极通过绝缘层与源电极,漏电极和半导体层电绝缘。 还提供了使用上述薄膜晶体管的按压感测装置。

    PRESSURE CONTROL SWITCH, METHOD FOR USING THE SAME AND ALARM SYSTEM USING THE SAME
    4.
    发明申请
    PRESSURE CONTROL SWITCH, METHOD FOR USING THE SAME AND ALARM SYSTEM USING THE SAME 有权
    压力控制开关,使用其的方法和使用其的报警系统

    公开(公告)号:US20110181430A1

    公开(公告)日:2011-07-28

    申请号:US12911897

    申请日:2010-10-26

    IPC分类号: G08B21/00 H01C10/10

    CPC分类号: H03K17/9625 G08B13/10

    摘要: The present disclosure relates to a pressure control switch. The pressure control switch includes a bistable resistance element. The bistable resistance element includes an organic, soft, low-conductivity matrix, and a plurality of high conductivity particles dispersed in the matrix. The bistable resistance element switches from a low resistance state to a high resistance state by receiving a pressure change applied to the bistable resistance element. The present disclosure also relates to a method for using the pressure control switch and an alarm system.

    摘要翻译: 本公开涉及压力控制开关。 压力控制开关包括双稳电阻元件。 双稳电阻元件包括有机,软,低电导率基体和分散在基质中的多个高电导率粒子。 双稳电阻元件通过接收施加到双稳电阻元件的压力变化而从低电阻状态切换到高电阻状态。 本公开还涉及使用压力控制开关和报警系统的方法。

    TEMPERATURE CONTROL SWITCH, METHOD FOR USING THE SAME AND ALARM SYSTEM USING THE SAME
    5.
    发明申请
    TEMPERATURE CONTROL SWITCH, METHOD FOR USING THE SAME AND ALARM SYSTEM USING THE SAME 有权
    温度控制开关,使用该温度控制开关的方法和使用其的报警系统

    公开(公告)号:US20110181424A1

    公开(公告)日:2011-07-28

    申请号:US12911905

    申请日:2010-10-26

    IPC分类号: G08B17/00 H01H37/00

    CPC分类号: H03K17/94

    摘要: The present disclosure relates to a temperature control switch. The temperature control switch includes a bistable resistance element. The bistable resistance element includes a low-conductivity matrix; and a number of high conductivity particles dispersed in the matrix. The bistable resistance element switches from a low resistance state to a high resistance state by receiving a temperature change applied to the bistable resistance element. The present disclosure also relates to a method for using the temperature control switch and an alarm system.

    摘要翻译: 本公开涉及一种温度控制开关。 温度控制开关包括双稳电阻元件。 双稳态电阻元件包括低电导率矩阵; 和分散在基质中的多个高电导率粒子。 双稳电阻元件通过接收施加到双稳态电阻元件的温度变化而从低电阻状态切换到高电阻状态。 本公开还涉及一种使用温度控制开关和报警系统的方法。

    SCHOTTKY BARRIER DIODE
    7.
    发明申请
    SCHOTTKY BARRIER DIODE 审中-公开
    肖特基二极管二极管

    公开(公告)号:US20130026598A1

    公开(公告)日:2013-01-31

    申请号:US13324769

    申请日:2011-12-13

    IPC分类号: H01L29/872 B82Y99/00

    摘要: A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated polymer material and a number of carbon nanotubes dispersed in the insulated polymer material.

    摘要翻译: 肖特基势垒二极管包括第一金属层,从第一金属层分离的第二金属层和半导体层。 半导体层与第一金属层肖特基接触并与第二金属层欧姆接触。 半导体层包括分散在绝缘聚合物材料中的绝缘聚合物材料和许多碳纳米管。

    THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME 有权
    薄膜晶体管和使用其的压敏传感器件

    公开(公告)号:US20130001556A1

    公开(公告)日:2013-01-03

    申请号:US13323911

    申请日:2011-12-13

    CPC分类号: H01L29/42384 H01L29/4908

    摘要: A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa.

    摘要翻译: 公开了一种使用该薄膜晶体管的薄膜晶体管和压敏元件。 薄膜晶体管包括源电极; 与源电极间隔开的漏电极; 与源电极和漏电极电连接的半导体层,限定在半导体层中并位于源电极和漏电极之间的沟道; 和与半导体层电绝缘的栅电极; 以及被配置为将源电极,漏电极和半导体层彼此绝缘的绝缘层,其中绝缘层由弹性模量范围为约0.1兆帕(MPa)至约10MPa的聚合材料制成。

    PHOTOELECTRIC CELL
    9.
    发明申请
    PHOTOELECTRIC CELL 有权
    光电池

    公开(公告)号:US20110315194A1

    公开(公告)日:2011-12-29

    申请号:US12876357

    申请日:2010-09-07

    CPC分类号: H01L35/32 Y10S977/742

    摘要: A photoelectric cell includes at least one photoelectric conversion module. The photoelectric module includes a first photoelectric conversion element and a second photoelectric conversion element. The first photoelectric conversion element is made of a first thermoelectric material having positive thermoelectric coefficient and comprises a first absorbing part and a first non-absorbing part. The second photoelectric conversion element is made of a second thermoelectric material having negative thermoelectric coefficient and comprises a second absorbing part and a second non-absorbing part. The first absorbing part is electrically connected with the second absorbing part.

    摘要翻译: 光电池包括至少一个光电转换模块。 光电模块包括第一光电转换元件和第二光电转换元件。 第一光电转换元件由具有正热电系数的第一热电材料制成,并且包括第一吸收部分和第一非吸收部分。 第二光电转换元件由具有负热电系数的第二热电材料制成,并且包括第二吸收部分和第二非吸收部分。 第一吸收部与第二吸收部电连接。

    DIODE EMPLOYING WITH CARBON NANOTUBE
    10.
    发明申请
    DIODE EMPLOYING WITH CARBON NANOTUBE 有权
    使用碳纳米管的二极管

    公开(公告)号:US20100237340A1

    公开(公告)日:2010-09-23

    申请号:US12791037

    申请日:2010-06-01

    IPC分类号: H01L51/10

    摘要: A diode includes an organic composite plate, a first electrode and a second electrode. The organic composite plate includes a first portion, a second portion and a plurality of carbon nanotubes distributed therein. The carbon nanotubes in the first portion have a first band gap and the carbon nanotubes in the second portion have a second band gap. The first band gap and the second band gap are different from each other. The first electrode is electrically connected to the first portion. The second electrode electrically is connected to the second portion.

    摘要翻译: 二极管包括有机复合板,第一电极和第二电极。 有机复合板包括分布在其中的第一部分,第二部分和多个碳纳米管。 第一部分中的碳纳米管具有第一带隙,并且第二部分中的碳纳米管具有第二带隙。 第一带隙和第二带隙彼此不同。 第一电极电连接到第一部分。 第二电极电连接到第二部分。