公开(公告)号：US20190221613A1

公开(公告)日：2019-07-18

申请号：US16362615

申请日：2019-03-23

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  C. Rinn CLEAVELIN

IPC分类号： H01L27/28 ,  H01L45/00 ,  H01L29/02 ,  H01L27/24 ,  H01L51/05 ,  H01L51/00 ,  G11C13/00

CPC分类号： H01L27/285 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/35 ,  G11C2213/73 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/02 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

公开(公告)号：US20180212172A1

公开(公告)日：2018-07-26

申请号：US15846214

申请日：2017-12-19

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： YU-DAN ZHAO ,  XIAO-YANG XIAO ,  YING-CHENG WANG ,  YUAN-HAO JIN ,  TIAN-FU ZHANG ,  QUN-QING LI

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0579 ,  H01L29/872 ,  H01L51/0005 ,  H01L51/0048 ,  H01L27/0814 ,  H01L29/47 ,  H01L29/495 ,  H01L29/0665 ,  H01L29/0673

摘要： A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

公开(公告)号：US09917139B2

公开(公告)日：2018-03-13

申请号：US15384647

申请日：2016-12-20

申请人： Nantero Inc.

发明人： Claude L. Bertin ,  C. Rinn Cleavelin ,  Thomas Rueckes ,  X. M. Henry Huang

IPC分类号： H01L29/02 ,  H01L27/28 ,  H01L51/00 ,  H01L45/00 ,  H01L27/24 ,  H01L51/05 ,  G11C13/00

CPC分类号： B62J7/06 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L27/285 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/861 ,  H01L29/872 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

公开(公告)号：US09390790B2

公开(公告)日：2016-07-12

申请号：US13716453

申请日：2012-12-17

申请人： Nantero Inc.

发明人： Claude L. Bertin ,  C. Rinn Cleavelin ,  Thomas Rueckes ,  X. M. Henry Huang ,  H. Montgomery Manning

IPC分类号： H01L29/02 ,  G11C13/00 ,  G11C13/02 ,  G11C23/00 ,  H01L45/00 ,  H01L29/861 ,  H01L29/872 ,  H01L27/24 ,  H01L29/16 ,  H01L29/06 ,  H01L51/00 ,  H01L27/28 ,  B82Y10/00

CPC分类号： B62J7/06 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L27/285 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/861 ,  H01L29/872 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

摘要翻译： 本公开涉及基于碳的二极管，基于碳的电阻变化存储元件，具有电阻变化存储元件和基于碳的二极管的电阻变化存储器，制造碳基二极管的方法，制造具有碳基二极管的电阻变化存储元件的方法，以及 制造具有基于碳的二极管的电阻变化存储元件的电阻变化存储器的方法。 碳基二极管可以是可以使用碳同素异形体形成的任何合适类型的二极管，例如半导体单壁碳纳米管（s-SWCNT），半导体Buckminsterfulleren（例如C60 Buckyballs）或半导体石墨层（层状石墨烯）。 碳基二极管可以是pn结二极管，肖特基二极管，其他任何其他类型的使用碳同素异形体形成的二极管。 碳基二极管可以放置在三维（3D）电子器件中的任何集成度，例如与部件或布线层集成。

公开(公告)号：US09018734B2

公开(公告)日：2015-04-28

申请号：US13442005

申请日：2012-04-09

申请人： Shashi P. Karna ,  Mark Griep ,  Govind Mallick

发明人： Shashi P. Karna ,  Mark Griep ,  Govind Mallick

IPC分类号： H01L29/93 ,  H01L51/05 ,  B82Y40/00 ,  B82Y10/00 ,  H01L51/00

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  B82Y40/00 ,  H01L51/0048 ,  Y10T428/2918

摘要： Methods and devices relating to diodes including single-wall carbon nanotubes (SWCNT) are disclosed according to embodiments of the present invention. According to one embodiment, a diode may include one or more SWCNTs. The SWCNTs may be grouped together in multiple bundles with the SWCNTs being generally aligned parallel to each other in the bundles.

摘要翻译： 根据本发明的实施例公开了涉及包括单壁碳纳米管（SWCNT）的二极管的方法和装置。 根据一个实施例，二极管可以包括一个或多个SWCNT。 SWCNT可以以多个束组合在一起，其中SWCNT通常在束中彼此平行对齐。

公开(公告)号：US20140036410A1

公开(公告)日：2014-02-06

申请号：US14051147

申请日：2013-10-10

申请人： National Institute for Materials Science ,  Murata Manufacturing Co., Ltd.

发明人： Toshihiro Okamatsu ,  Minoru Osada ,  Takayoshi Sasaki

IPC分类号： H01G4/10 ,  H01G4/018

CPC分类号： H01G4/10 ,  H01G4/018 ,  H01G4/18 ,  H01G4/206 ,  H01G4/33 ,  H01L28/40 ,  H01L29/94 ,  H01L51/0037 ,  H01L51/0579

摘要： A thin film capacitor includes a substrate and a dielectric thin film element formed on the substrate. The substrate can include an Si plate, an SiO2 film on the Si plate, and a Ti film formed on the SiO2 film. The dielectric thin film element includes a lower electrode, a dielectric thin film on the lower electrode, and an upper electrode formed on the dielectric thin film. The dielectric thin film is a thin film formed of a nanosheet, and a void portion of the dielectric thin film is filled with a p-type conductive organic polymer. Ti0.87O2, Ca2Nb3O10 or the like, is used as a dielectric material to form a major component of the nanosheet. As the p-type conductive organic polymer, polypyrrole, polyaniline, polyethylene dioxythiophene or the like, is suitable.

摘要翻译： 薄膜电容器包括在基板上形成的基板和电介质薄膜元件。 基板可以包括Si板，Si板上的SiO 2膜和形成在SiO 2膜上的Ti膜。 电介质薄膜元件包括下电极，下电极上的电介质薄膜和形成在电介质薄膜上的上电极。 电介质薄膜是由纳米片形成的薄膜，电介质薄膜的空隙部分填充有p型导电有机聚合物。 Ti0.87O2，Ca2Nb3O10等用作电介质材料以形成纳米片的主要成分。 作为p型导电性有机聚合物，可以使用聚吡咯，聚苯胺，聚乙烯二氧噻吩等。

公开(公告)号：US20130026598A1

公开(公告)日：2013-01-31

申请号：US13324769

申请日：2011-12-13

申请人： CHUN-HUA HU ,  CHANG-HONG LIU ,  SHOU-SHAN FAN

发明人： CHUN-HUA HU ,  CHANG-HONG LIU ,  SHOU-SHAN FAN

IPC分类号： H01L29/872 ,  B82Y99/00

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  H01L51/0048 ,  Y10S977/742

摘要： A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated polymer material and a number of carbon nanotubes dispersed in the insulated polymer material.

摘要翻译： 肖特基势垒二极管包括第一金属层，从第一金属层分离的第二金属层和半导体层。 半导体层与第一金属层肖特基接触并与第二金属层欧姆接触。 半导体层包括分散在绝缘聚合物材料中的绝缘聚合物材料和许多碳纳米管。

公开(公告)号：US08222630B2

公开(公告)日：2012-07-17

申请号：US11402376

申请日：2006-04-12

申请人： Won Jae Joo ,  Kwang Hee Lee ,  Sang Kyun Lee ,  Tae Lim Choi

发明人： Won Jae Joo ,  Kwang Hee Lee ,  Sang Kyun Lee ,  Tae Lim Choi

IPC分类号： H01L45/00 ,  H01L51/10

CPC分类号： H01L51/0021 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0579 ,  H01L2251/105

摘要： An organic memory device having a memory active region formed by an embossing structure. This invention provides an organic memory device including a substrate, a first electrode formed on the substrate, an organic memory layer formed on the first electrode, a second electrode formed on the organic memory layer and an embossing structure provided at the organic memory layer to form a memory active region.

摘要翻译： 一种具有由压花结构形成的存储器有源区的有机存储器件。 本发明提供了一种有机存储装置，包括：基板，形成在基板上的第一电极，形成在第一电极上的有机存储层，形成在有机存储层上的第二电极和设置在有机存储层上的压花结构， 一个记忆活跃区域。

公开(公告)号：US20120148842A1

公开(公告)日：2012-06-14

申请号：US13371749

申请日：2012-02-13

申请人： Nachiket Raravikar ,  Daewoong Suh ,  Chris Matayabas

发明人： Nachiket Raravikar ,  Daewoong Suh ,  Chris Matayabas

IPC分类号： D02G3/00 ,  B05D5/12 ,  B82Y40/00

CPC分类号： H01L51/444 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0048 ,  H01L51/0575 ,  H01L51/0579 ,  Y02E10/549

摘要： Methods and associated structures of forming microelectronic devices are described. Those methods may include method of forming a layered nanotube structure comprising a wetting layer disposed on a nanotube, a Shottky layer disposed on the wetting layer, a barrier layer disposed on the Shottky layer, and a matrix layer disposed on the barrier layer.

摘要翻译： 描述形成微电子器件的方法和相关结构。 这些方法可以包括形成层状纳米管结构的方法，其包括设置在纳米管上的润湿层，设置在润湿层上的肖特基层，设置在肖特基层上的阻挡层和设置在阻挡层上的矩阵层。

公开(公告)号：US08124250B2

公开(公告)日：2012-02-28

申请号：US12151850

申请日：2008-05-08

申请人： Katsuyuki Morii

发明人： Katsuyuki Morii

IPC分类号： H01L51/54 ,  B05D5/12

CPC分类号： H01L51/0575 ,  H01L51/0039 ,  H01L51/0579 ,  H01L51/422 ,  H01L51/4226 ,  H05B33/22 ,  Y10S428/917

摘要： An organic electronic device includes: a pair of electrodes, an organic film layer containing an organic substance having a benzothiadiazole skeleton, a metal oxide layer provided on the organic film layer by vacuum vapor deposition, and an interface formed between the pair of electrodes out of the organic film layer and the metal oxide layer.

摘要翻译： 有机电子器件包括：一对电极，含有具有苯并噻二唑骨架的有机物质的有机膜层，通过真空气相沉积设置在有机膜层上的金属氧化物层，以及在该对电极之间形成的界面 有机膜层和金属氧化物层。