公开(公告)号：US10229786B2

公开(公告)日：2019-03-12

申请号：US15322131

申请日：2015-06-26

Applicant: CNM Technologies GmbH

Inventor： Armin Goelzhaeuser ,  Andre' Beyer ,  Paul Penner ,  Xianghui Zhang

IPC: H01G4/30 ,  H01G4/33 ,  H01G4/008 ,  H01G4/14 ,  H01G4/20 ,  H01G4/32 ,  H01G11/36 ,  H01L49/02

Abstract: A multilayer structure comprising a first layer, a second layer and a third layer, a capacitor comprising at least one multilayer structure, a capacitor comprising at least two two-layer structures, a method of manufacture of the multilayer structure, a method of manufacture of the capacitor, a microelectronic device and an energy storage device comprising the capacitor. The multilayer structure comprises a first layer, a second layer and a third layer, wherein the first layer and the third layer each form at least one of at least two electrodes and comprise one or more pyrolyzed carbon nanomembranes or one or more layers of graphene, and the second layer is a dielectric comprising one or more carbon nanomembranes.

公开(公告)号：US10586651B2

公开(公告)日：2020-03-10

申请号：US16270015

申请日：2019-02-07

Applicant: CNM Technologies GmbH

Inventor： Armin Goelzhaeuser ,  Andre' Beyer ,  Paul Penner ,  Xianghui Zhang

IPC: H01G4/008 ,  C01B32/186 ,  G03F7/20 ,  H01G4/08 ,  H01G4/228 ,  B32B9/00 ,  G03F7/16 ,  G03F7/26 ,  B82Y40/00 ,  B82Y30/00

Abstract: Disclosed is a method for the manufacture of a multilayer structure comprising a first layer, a second layer and a third layer for example to form a capacitor. The multilayer structure comprises a first layer, a second layer and a third layer, wherein the first layer and the third layer each form at least one of at least two electrodes and comprise one or more pyrolyzed carbon nanomembranes or one or more layers of graphene, and the second layer is a dielectric comprising one or more carbon nanomembranes.

公开(公告)号：US20190228910A1

公开(公告)日：2019-07-25

申请号：US16270015

申请日：2019-02-07

Applicant: CNM Technologies GmbH

Inventor： Armin Goelzhaeuser ,  Andre' Beyer ,  Paul Penner ,  Xianghui Zhang

IPC: H01G4/08 ,  H01G4/008 ,  H01G4/228 ,  C01B32/186 ,  B32B9/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: Disclosed is a method for the manufacture of a multilayer structure comprising a first layer, a second layer and a third layer for example to form a capacitor. The multilayer structure comprises a first layer, a second layer and a third layer, wherein the first layer and the third layer each form at least one of at least two electrodes and comprise one or more pyrolyzed carbon nanomembranes or one or more layers of graphene, and the second layer is a dielectric comprising one or more carbon nanomembranes.

公开(公告)号：US20170140873A1

公开(公告)日：2017-05-18

申请号：US15322131

申请日：2015-06-26

Applicant: CNM Technologies GmbH

Inventor： Armin Goelzhaeuser ,  Andre' Beyer ,  Paul Penner ,  Xianghui Zhang

IPC: H01G4/30 ,  H01G4/008 ,  H01G4/14 ,  H01G4/32

CPC classification number: H01G4/30 ,  H01G4/008 ,  H01G4/14 ,  H01G4/206 ,  H01G4/32 ,  H01G4/33 ,  H01G11/36 ,  H01L28/60

Abstract: A multilayer structure comprising a first layer, a second layer and a third layer, a capacitor comprising at least one multilayer structure, a capacitor comprising at least two two-layer structures, a method of manufacture of the multilayer structure, a method of manufacture of the capacitor, a microelectronic device and an energy storage device comprising the capacitor. The multilayer structure comprises a first layer, a second layer and a third layer, wherein the first layer and the third layer each form at least one of at least two electrodes and comprise one or more pyrolysed carbon nanomembranes or one or more layers of graphene, and the second layer is a dielectric comprising one or more carbon nanomembranes.