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    Method of manufacturing high permittivity low leakage capacitor and energy storing device
    3.
    发明授权
    Method of manufacturing high permittivity low leakage capacitor and energy storing device 有权

    公开(公告)号：US09916930B2

    公开(公告)日：2018-03-13

    申请号：US14668779

    申请日：2015-03-25

    Applicant: Carver Scientific, Inc.

    Inventor： David Reginald Carver

    IPC: H01G4/018 ,  H01G13/00 ,  H01G4/04 ,  H02J7/34 ,  H01G4/20

    CPC classification number: H01G4/018 ,  H01G4/04 ,  H01G4/206 ,  H01G13/00 ,  H02J7/345

    Abstract: A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

    ENHANCED STACKING FOR IMPROVED CAPACITANCE
    4.
    发明申请
    ENHANCED STACKING FOR IMPROVED CAPACITANCE 审中-公开

    公开(公告)号：US20170278636A1

    公开(公告)日：2017-09-28

    申请号：US15622623

    申请日：2017-06-14

    Applicant: EEStor, Inc.

    Inventor： Richard D. Weir

    IPC: H01G4/30 ,  H01G4/14 ,  H01G4/008 ,  H01G4/12 ,  H01G4/224

    CPC classification number: H01G4/30 ,  H01G4/0085 ,  H01G4/1227 ,  H01G4/14 ,  H01G4/18 ,  H01G4/206 ,  H01G4/306

    Abstract: A capacitor includes a first conductive plate, a second conductive plate, a floating conductive plate and a dielectric material separating the floating conductive plate from the first conductive plate and from the second conductive plate. The floating conductive plate has a first surface closer to the first conductive plate than to the second conductive plate and has a second surface closer to the second conductive plate than to the first conductive plate. In response to an electric field between the first conductive plate and the second conductive plate, charge separation is induced in the floating conductive plate such that a first charge induced on the first surface has a first polarity and a second charge induced on the second surface has a second polarity, where the second polarity different from the first polarity.

    Multilayer Structure
    6.
    发明申请
    Multilayer Structure 审中-公开

    公开(公告)号：US20170140873A1

    公开(公告)日：2017-05-18

    申请号：US15322131

    申请日：2015-06-26

    Applicant: CNM Technologies GmbH

    Inventor： Armin Goelzhaeuser ,  Andre' Beyer ,  Paul Penner ,  Xianghui Zhang

    IPC: H01G4/30 ,  H01G4/008 ,  H01G4/14 ,  H01G4/32

    CPC classification number: H01G4/30 ,  H01G4/008 ,  H01G4/14 ,  H01G4/206 ,  H01G4/32 ,  H01G4/33 ,  H01G11/36 ,  H01L28/60

    Abstract: A multilayer structure comprising a first layer, a second layer and a third layer, a capacitor comprising at least one multilayer structure, a capacitor comprising at least two two-layer structures, a method of manufacture of the multilayer structure, a method of manufacture of the capacitor, a microelectronic device and an energy storage device comprising the capacitor. The multilayer structure comprises a first layer, a second layer and a third layer, wherein the first layer and the third layer each form at least one of at least two electrodes and comprise one or more pyrolysed carbon nanomembranes or one or more layers of graphene, and the second layer is a dielectric comprising one or more carbon nanomembranes.

    Fractional order capacitor
    8.
    发明授权
    Fractional order capacitor 有权
    分数阶电容

    公开(公告)号：US09305706B2

    公开(公告)日：2016-04-05

    申请号：US14199296

    申请日：2014-03-06

    Applicant: Saudi Basic Industries Corporation

    Inventor： Mahmoud N. Almadhoun ,  Amro Elshurafa ,  Khaled Salama ,  Husam Alshareef

    IPC: H01G4/06 ,  H01G4/005 ,  H03K5/14 ,  H05K1/18 ,  H01G4/20 ,  B82Y30/00

    CPC classification number: H01G4/005 ,  B82Y30/00 ,  H01G4/206 ,  H03K5/14 ,  H05K1/182

    Abstract: Disclosed is a fractional order capacitor comprising a dielectric nanocomposite layer of thickness t, comprising a first side, and a second side opposite the first side, a first electrode layer coupled to the first side of the dielectric nanocomposite layer, a second electrode layer coupled to the second side of the dielectric nanocomposite layer, a complex impedance phase angle dependent on at least a material weight percentage of filler material in a dielectric nanocomposite layer.

    Abstract translation: 公开了一种包括厚度为t的电介质纳米复合层的分数阶电容器，包括第一侧和与第一侧相对的第二侧，耦合到电介质纳米复合层的第一侧的第一电极层，耦合到 电介质纳米复合材料层的第二面，复阻抗相位角取决于电介质纳米复合材料层中填料材料的至少材料重量百分比。

    Method of manufacturing high permittivity low leakage capacitor and energy storing device
    10.
    发明授权
    Method of manufacturing high permittivity low leakage capacitor and energy storing device 有权
    制造高介电常数低漏电容器和储能装置的方法

    公开(公告)号：US09011627B2

    公开(公告)日：2015-04-21

    申请号：US13853712

    申请日：2013-03-29

    Applicant: Carver Scientific, Inc.

    Inventor： David Reginald Carver

    IPC: H01G13/00 ,  H01G4/04 ,  H02J7/34 ,  H01G4/018 ,  H01G4/20

    CPC classification number: H01G4/018 ,  H01G4/04 ,  H01G4/206 ,  H01G13/00 ,  H02J7/345

    Abstract: A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

    Abstract translation: 提供了用于制造用于电容器的高介电常数介电材料的方法。 公开了具有增强性能的有机非导电介质中的几种高介电常数材料及其制备方法。 公开了形成一些特定电介质材料的薄膜的一般方法，其中有机聚合物用于生产低电导率的电介质涂层。 此外，使用温和的还原剂在低温下证明形成某些过渡金属盐作为盐或氧化物基质的方法。 此外，提供了用于从长期存储电容器恢复和再生泄漏电流的电路结构和相关联的操作方法，以便提高这些装置的制造产量和效用。

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