公开(公告)号：US20160181457A1

公开(公告)日：2016-06-23

申请号：US14978726

申请日：2015-12-22

Applicant: COMMISSARIA À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Sébastien Dubois ,  Nicolas Enjalbert ,  Jean-Paul Garandet ,  Benoît Martel ,  Jordi Veirman

IPC: H01L31/0747 ,  H01L31/20

CPC classification number: H01L31/0747 ,  H01L21/761 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

Abstract: A process for fabricating a wafer of thickness, including at least (i) providing a monolithic substrate made of p-doped silicon; (ii) forming crystal defects in predefined portions of at least one of the sides of the substrate; (iii) subjecting the subject to a thermal anneal; (iv) bringing all or some of one of the sides of the substrate into contact with hydrogen; (v) if necessary, promoting the diffusion of the hydrogen; and (vi) subjecting the substrate to a heat treatment.

Abstract translation: 一种制造厚度晶片的方法，至少包括（i）提供由p掺杂硅制成的单片基板; （ii）在所述基板的至少一个侧面的预定部分中形成晶体缺陷; （iii）使受试者进行热退火; （iv）使基材的一侧的全部或一部分与氢接触; （v）如有必要，促进氢的扩散; 和（vi）对基材进行热处理。