公开(公告)号：US20190187375A1

公开(公告)日：2019-06-20

申请号：US16226470

申请日：2018-12-19

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Fabrice NEMOUCHI ,  Charles BAUDOT ,  Yann BOGUMILOWICZ ,  Elodie GHEGIN ,  Philippe RODRIGUEZ

IPC: G02B6/13 ,  G02B6/122

CPC classification number: G02B6/131 ,  G02B6/1225 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/1213 ,  G02B2006/12142 ,  G02B2006/12178 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02647 ,  H01L25/0753 ,  H01L33/0066 ,  H01L33/0079

Abstract: A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.