公开(公告)号：US20220028802A1

公开(公告)日：2022-01-27

申请号：US17443131

申请日：2021-07-21

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Nicolas POSSEME ,  Stefan LANDIS ,  Hubert TEYSSEDRE

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L21/311 ,  H01L21/033

Abstract: The invention relates to a method for making an individualization zone of a microchip comprising a first (10A) and a second (20A) level of electrical tracks (10, 20), and a conductor layer (30A) comprising via holes (30), the method comprising the following steps: providing at least one dielectric layer (200, 201, 202) having a thickness hd, forming a metal mask layer (300) having a thickness hm and a residual stress σr on the at least one dielectric layer (200, 201, 202), etching the layer (300) so as to form line patterns (310) of width l, etching the at least one dielectric layer (200, 201, 202) between the line patterns (310) so as to form trenches (210) separated by walls (211), filling the trenches (210) with an electrically conductive material so as to form the electrical tracks (10, 10KO) of the first level (10A), forming via holes (30, 30OK, 30KO1, 30KO2) of the conductor layer (30A), forming the second level (20A) of electrical tracks (20, 20OK), the method being characterized in that the thicknesses hd and hm, the residual stress σr, and the width l are chosen so that the line patterns (310) and the underlying walls (211) have random oscillations after etching of the at least one dielectric layer (200, 201, 202).

公开(公告)号：US20220111562A1

公开(公告)日：2022-04-14

申请号：US17262095

申请日：2019-07-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert TEYSSEDRE ,  Pierre BRIANCEAU ,  Stefan LANDIS

IPC: B29C33/38 ,  G02B3/00 ,  G03F7/00 ,  B29D11/00

Abstract: A method for producing a structure having at least one curved pattern includes providing a substrate having a front face, where one portion is structured by at least one plurality of reliefs, the reliefs of each plurality defining spaces therebetween, and another portion is free of reliefs. The method also includes depositing a base layer of a material such as a polymer or a glass, on the front face of the substrate, at least in line with the reliefs, and allowing the material of the base layer to at least partially fill the at least one of the spaces by deformation. The base layer is thus deformed so that its free surface has at least one curved pattern.

公开(公告)号：US20210217937A1

公开(公告)日：2021-07-15

申请号：US16951357

申请日：2020-11-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stefan LANDIS ,  Hubert TEYSSEDRE

IPC: H01L33/58 ,  H01L31/18 ,  H01L31/0232

Abstract: A method is provided for producing a microelectronic device having a subsequent grating of reliefs of which at least one wall is slanted, the method including providing a structure including a base, and an initial grating of reliefs, each relief having at least one proximal end in contact with the base, a distal end, and at least one wall extending between the proximal end and the distal end; and laying the reliefs of the initial grating on one another, by application of at least one stress on the structure, such that walls facing two adjacent reliefs come into contact, thus generating at least one subsequent grating of reliefs of which at least one wall is slanted.

公开(公告)号：US20240326297A1

公开(公告)日：2024-10-03

申请号：US18693438

申请日：2022-09-22

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert TEYSSEDRE ,  Nicolas POSSEME ,  Stefan LANDIS

IPC: B29C33/38 ,  B29C59/02

CPC classification number: B29C33/3842 ,  B29C59/02

Abstract: A method for manufacturing a mould for nanoprinting and the associated mould, includes providing a substrate having a layer, and at least one ion implantation configured so as to obtain in the layer, at least one first non-implanted portion or portion having a first implantation, at least one second portion having a second implantation, and a third non-implanted portion distinct from the first portion. After implantation, the method includes etching the layer configured so as to have a different etching speed between at least the second portion and the third portion, so as to etch through the openings of an etching mask, a plurality of patterns of different heights being included in the layer.

公开(公告)号：US20220350252A1

公开(公告)日：2022-11-03

申请号：US17660099

申请日：2022-04-21

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert TEYSSEDRE ,  Nicolas POSSEME ,  Zouhir MEHREZ ,  Michael MAY

IPC: G03F7/40 ,  G03F7/00 ,  G03F7/20

Abstract: A process for producing a hybrid structured surface, including depositing, on a substrate, a layer of mineral resin including a proportion of Si and/or of SiO2 includes between 1% and 30% by molar mass; forming a structure including a plurality of pattern motifs in that layer, having at least one dimension, measured parallel or perpendicular to the substrate, includes between 50 nm and 500 μm; forming a roughness on at least part of the surface of the pattern motifs.