公开(公告)号：US20160097140A1

公开(公告)日：2016-04-07

申请号：US14872731

申请日：2015-10-01

申请人： CORNELL UNIVERSITY

发明人： Richard D. Robinson ,  Obafemi Otelaja

IPC分类号： C25D13/02 ,  C25D3/22 ,  C25D3/30 ,  C01G3/12 ,  C25D3/26 ,  C25D3/34 ,  C25D3/54 ,  C01B19/04 ,  C25D13/12 ,  C25D3/12

CPC分类号： C25D13/02 ,  C01B19/007 ,  C01G3/12 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/40 ,  C01P2006/80 ,  C25D13/12

摘要： A facile room-temperature method for assembling colloidal copper sulfide (Cu2-xS) nanoparticles into highly electrically conducting calcogenide material layer films utilizes ammonium sulfide for connecting the nanoparticles, while simultaneously effecting templating surfactant ligand removal. The foregoing process steps transform an as-deposited insulating films into a highly conducting films (i.e., having a conductivity at least about 75 S·cm−1). The methodology is anticipated as applicable to copper chalcogenides other than copper sulfide, as well as metal chalcogenides other than copper chalcogenides. The comparatively high conductivities reported are attributed to better interparticle coupling through the ammonium sulfide treatment. This approach presents a scalable room temperature route for fabricating comparatively highly conducting nanoparticle assemblies for large area electronic and optoelectronic applications.

摘要翻译： 将胶体硫化铜（Cu2-xS）纳米粒子组装成高导电性的化学物质层膜的简便的室温方法利用硫化铵连接纳米粒子，同时进行模板表面活性剂配体去除。 上述工艺步骤将沉积的绝缘膜转变成高导电膜（即，具有至少约75S·cm-1的导电率）。 该方法预期适用于硫化铜以外的硫属硫族化物，以及除硫属硫族化物以外的金属硫族化物。 报告的较高电导率归因于通过硫化铵处理的更好的颗粒间偶联。 该方法提供了用于制造用于大面积电子和光电子应用的相对高导电性纳米颗粒组件的可扩展室温路线。