LIGHT EMITTING DIODES INCLUDING LIGHT EMITTING SURFACE BARRIER LAYERS, AND METHODS OF FABRICATING SAME
    1.
    发明申请
    LIGHT EMITTING DIODES INCLUDING LIGHT EMITTING SURFACE BARRIER LAYERS, AND METHODS OF FABRICATING SAME 审中-公开
    发光二极管,包括发光面板障碍层及其制造方法

    公开(公告)号:US20140175473A1

    公开(公告)日:2014-06-26

    申请号:US13758565

    申请日:2013-02-04

    Applicant: CREE, INC.

    CPC classification number: H01L33/44 H01L33/507 H01L33/54

    Abstract: A light emitting device includes a Light Emitting Diode (LED) having a light emitting surface, a silicon nitride layer on the light emitting surface and a sealed environment surrounding the light emitting surface. The silicon nitride layer may be directly on and cover the light emitting surface. The silicon nitride layer may completely cover the light emitting surface. The silicon nitride layer may provide a substance blocking layer such as a moisture blocking layer and/or a carbon blocking layer that can prevent moisture and/or carbon, such as Volatile Organic Compounds (VOCs) that contain carbon, from reaching the light emitting surface.

    Abstract translation: 发光器件包括具有发光表面的发光二极管(LED),发光表面上的氮化硅层和围绕发光表面的密封环境。 氮化硅层可以直接在发光表面上并覆盖发光表面。 氮化硅层可以完全覆盖发光表面。 氮化硅层可以提供可以防止水分和/或碳的物质阻挡层,例如防潮层和/或碳阻挡层,例如含有碳的挥发性有机化合物(VOC)到达发光表面 。

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