公开(公告)号：US20210043623A1

公开(公告)日：2021-02-11

申请号：US16980368

申请日：2019-03-05

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jun Sun

IPC: H01L27/07 ,  H01L29/78 ,  H01L29/08

Abstract: An anti-static metal oxide semiconductor field effect transistor structure includes an anti-static body structure and a slave metal oxide semiconductor field effect transistor, the anti-static body structure includes: a main metal oxide semiconductor field effect transistor; a first silicon controlled rectifier, an anode thereof being connected to a drain of the main metal oxide semiconductor field effect transistor, a cathode and a control electrode thereof being connected to a source of the main metal oxide semiconductor field effect transistor; and a second silicon controlled rectifier, an anode thereof being connected to the drain of the main metal oxide semiconductor field effect transistor, a cathode thereof being connected to a gate of the main metal oxide semiconductor field effect transistor, a control electrode thereof being connected to the source or the gate of the main metal oxide semiconductor field effect transistor.

公开(公告)号：US11222888B2

公开(公告)日：2022-01-11

申请号：US16980368

申请日：2019-03-05

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jun Sun

IPC: H01L23/62 ,  H01L27/02 ,  H01L27/07 ,  H01L29/08 ,  H01L29/78 ,  H01L23/60 ,  H01L29/87

Abstract: An anti-static metal oxide semiconductor field effect transistor structure includes an anti-static body structure and a slave metal oxide semiconductor field effect transistor, the anti-static body structure includes: a main metal oxide semiconductor field effect transistor; a first silicon controlled rectifier, an anode thereof being connected to a drain of the main metal oxide semiconductor field effect transistor, a cathode and a control electrode thereof being connected to a source of the main metal oxide semiconductor field effect transistor; and a second silicon controlled rectifier, an anode thereof being connected to the drain of the main metal oxide semiconductor field effect transistor, a cathode thereof being connected to a gate of the main metal oxide semiconductor field effect transistor, a control electrode thereof being connected to the source or the gate of the main metal oxide semiconductor field effect transistor.

公开(公告)号：US10381343B2

公开(公告)日：2019-08-13

申请号：US15569848

申请日：2016-04-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jun Sun ,  Zhongyu Lin ,  Guangyang Wang ,  Guipeng Sun

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/87 ,  H01L29/40

Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well (330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).